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US 9,911,676 B2Granted
System and method for gas-phase passivation of a semiconductor surface
AssigneeASM IP Holding B.V.
InventorsFu Tang, Michael E. Givens, Qi Xie, Xiaoqiang Jiang, Petri Raisanen, Pauline Calka
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Abstract
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.
Claims20
A method of passivating a surface of a semiconductor, the method comprising the steps of:
- providing the surface of the semiconductor to a reaction chamber of a reactor;
- exposing the surface of the semiconductor to a gas-phase chalcogen precursor selected from the group consisting of NH4HS, (NH4)2Se, (NH4)2Te, H2Te, NH4HSe, an organochalcogen compound, SC(NH2)2, SeC(NH2)2, and combinations of such compounds in the reaction chamber;
- and
- passivating the surface of the semiconductor in the reaction chamber using the gas-phase chalcogen precursor to form a passivated semiconductor surface,
- wherein a pressure within the reaction chamber is between 0.5 Torr and 760 Torr.
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A system for passivating a surface of a semiconductor, the system comprising:
- a reactor;
- and
- a chalcogen precursor source fluidly coupled to the reactor,
- wherein the chalcogen precursor source provides a gas-phase chalcogen precursor to a reaction chamber of the reactor, and wherein the chalcogen precursor source is selected from the group consisting of NH4HS, (NH4)2Se, (NH4)2Te, H2Te, NH4HSe, an organochalcogen compound, SC(NH2)2, SeC(NH2)2, and combinations of such compounds.
1 more element
Dependencies are inferred from the claim text.