Apparatus for enhanced physical vapor deposition

An apparatus, comprising:

• a primary cathode configured for free space interaction with a substrate operative as an anode;
• a first annular cathode with a first annulus surface within a first diameter and a second annular cathode with a second annulus surface within a second diameter, wherein the first annulus surface faces the second annulus surface and wherein the primary cathode, the first annular cathode, the second annular cathode are axially aligned and the first diameter and the second diameter are at or within an outer diameter of the primary cathode, wherein the primary cathode is a solid disk located between the substrate and the first annular cathode and the second annular cathode, the first annulus surface and the second annulus surface generating electrons that are used in generation of plasma on the primary cathode and above the substrate;
• wherein the primary cathode is sputtered by the plasma to deposit material on the substrate with controllable plasma density to levels above 1×1018 m−3, with ignition capability at a working pressure to 0.05 Pa.