Light emitting diode and data transmission and reception apparatus
AssigneeSouthern Taiwan University of Science and Technology
InventorMing-Lun Lee
Life of this patent
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Abstract
A light emitting diode, including a semiconductor epitaxial structure, a first electrode and a second electrode is provided. The semiconductor epitaxial structure includes a plurality stacked light-emitting layers, and each of the light-emitting layers respectively emits different range of wavelength of light. The first electrode is electrically connected to the semiconductor epitaxial structure. The second electrode is electrically connected to the semiconductor epitaxial structure. Furthermore, a data transmission and reception apparatus is provided.
Claims20
A light emitting diode chip, applied to a visible light communication system, the light emitting diode chip comprising:
- a semiconductor epitaxial structure comprising a plurality of stacked light emitting layers for emitting a spectrum with at least three wavelength peaks, the stacked light emitting layers comprising at least two quantum well layers for emitting at least two of the wavelength peaks, an electroluminescent quantum well layer and a plurality of wavelength conversion layers;
- a first electrode, electrically connected to the semiconductor epitaxial structure;
- and
- a second electrode, electrically connected to the semiconductor epitaxial structure.
A light emitting diode chip, applied to a visible light communication system, the light emitting diode chip comprising:
- a semiconductor epitaxial structure comprising a plurality of tunnel junction layers, a plurality of stacked light emitting layers for emitting a spectrum with at least three wavelength peaks, the stacked light emitting layers comprising at least two quantum well layers for emitting at least two of the wavelength peaks, a plurality of stacked light emitting units, each of the tunnel junction layers is located between adjacent light emitting units, wherein each of the light emitting units comprises:
- a first type doped semiconductor layer;
- and
- a second type doped semiconductor layer, wherein each of the light emitting layers is located between the first type doped semiconductor layer and the second type doped semiconductor layer;
- a first electrode, electrically connected to the semiconductor epitaxial structure;
- and
- a second electrode, electrically connected to the semiconductor epitaxial structure.
Dependencies are inferred from the claim text.