# US 9,899,150 B2 · Energy storage device and method of production thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,899,150 B2 - Document ID: US9899150B2 - Status: Granted - Kind: B2 - Application number: 14/710,480 - Filed: 2015-05-12 - Published: 2016-01-21 - Granted: 2018-02-20 - Earliest claimed: 2014-05-12 - Assignees: Capacitor Sciences Incorporated - Applicants: Capacitor Sciences Incorporated - Inventors: Pavel Ivan Lazarev - Web page: https://patentgrep.com/patent/US9899150B2 ## CPC - H01G 4/14: Organic dielectrics - H01G 4/30: Stacked capacitors (H01G4/33 takes precedence) - H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) ## Abstract The present invention relates generally to the fields of electrical engineering and electronics. More specifically, the present invention relates to passive components of electrical circuitry and more particularly to energy storage devices and method of production thereof. ## Claims ### Claim 1 An energy storage device comprising a first electrode, a second electrode, and a solid multilayer structure disposed between said first and second electrodes, wherein said electrodes are flat and planar and positioned parallel to each other, and wherein said solid multilayer structure comprises m insulating and conductive layers, said layers are disposed parallel to said electrodes, and said layers have the following sequence: A-B-(A-B- . . . A-B-)A, where A is a homogeneous insulating layer which comprises an insulating dielectric material, B is a homogeneous conductive layer, and m is equal to 3 or more, wherein an insulating layer thickness (dins), a conductive layer thickness (dcond , a number) of the insulating layers (nins ≧2), a dielectric permittivity of the insulating dielectric material (∈ins) and a dielectric permittivity of the conductive layer (∈cond) satisfy the following relation: dcond=p·(nins/(nins−1)·(∈cond/∈ins)·dins, where p≧3. ### Claim 2 (depends on 1) An energy storage device according to claim 1, wherein said insulating layers are crystalline. ### Claim 3 (depends on 1) An energy storage device according to claim 1, wherein said insulating layers comprise modified organic compounds of the general structural formula I: {Cor}(M)n, (I) where Cor is a polycyclic organic compound with conjugated π-system, M are modifying functional groups; and n is the number of the modifying functional groups, where n is equal to 1 or more. ### Claim 4 (depends on 3) An energy storage device according to claim 3, wherein the polycyclic organic compound is selected from the group consisting of oligophenyl, imidazole, pyrazole, acenaphthene, triaizine, and indanthrone, and the polycyclic organic compound has a general structural formula selected from the group consisting of structures 1-43 as follows: ### Claim 5 (depends on 3) An energy storage device according to claim 3, wherein the modifying functional groups are selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, and any combination thereof. ### Claim 6 (depends on 1) An energy storage device according to claim 1, wherein said insulating layers comprise polymeric materials selected from the group consisting of fluorinated alkyls, polyethylene, kevlar, poly(vinylidene fluoride-hexafluoropropylene), polypropylene, fluorinated polypropylene, polydimethylsiloxane. ### Claim 7 (depends on 1) An energy storage device according to claim 1, wherein the insulating layers comprise a polymeric material formed with units selected from structures 44 to 49 as follows: ### Claim 8 (depends on 1) An energy storage device according to claim 1, wherein the conductive layers are crystalline. ### Claim 9 (depends on 1) An energy storage device according to claim 1, wherein the conductive layers comprise material possessing molecular conductivity. ### Claim 10 (depends on 1) An energy storage device according to claim 1, wherein said conductive layers comprise electroconductive oligomers. ### Claim 11 (depends on 10) An energy storage device according to claim 10, wherein longitudinal axes of the electroconductive oligomers are directed predominantly perpendicularly to the electrodes. ### Claim 12 (depends on 10) An energy storage device according to claim 10, wherein longitudinal axes of the electroconductive oligomers are directed predominantly parallel to the electrodes. ### Claim 13 (depends on 10) An energy storage device according to claim 10, wherein the electroconductive oligomers predominantly possess lateral translational symmetry. ### Claim 14 (depends on 10) An energy storage device according to claim 10, wherein the electroconductive oligomers are selected from the group consisting of structures 50 to 56 as follows: where X =2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12. ### Claim 15 (depends on 1) An energy storage device according to claim 1, wherein said conductive layers comprise low-molecular weight electroconductive polymers. ### Claim 16 (depends on 15) An energy storage device according to claim 15, wherein the low-molecular weight electroconductive polymers have monomers selected from the group consisting of structures 50 to 56 as follows: where X =2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or 12. ### Claim 17 (depends on 10) An energy storage device according to claim 10, wherein the electroconductive oligomers further comprise substitute groups and are described by the following general structural formula II: (electroconductive oligomer)-Rq (II) where Rq is a set of substitute groups, and q is a number of the substitute groups R in the set Rq, q equals to 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10. ### Claim 18 (depends on 17) An energy storage device according to claim 17, wherein the substitute groups R are independently selected from the group consisting of alkyl, aryl, substituted alkyl, substituted aryl, and any combination thereof. ### Claim 19 (depends on 1) An energy storage device according to claim 1, wherein the electrodes comprise Pt, Cu, Al, Ag and/or Au. ### Claim 20 (depends on 1) An energy storage device according to claim 1, wherein the electrodes comprise copper, m is equal to 3, the insulating dielectric material A comprises polyethylene, the conductive material B comprises polyaniline (PANI), insulating layer thickness is dins=25 nm, conductive layer thickness dcond=50 μm, and a breakdown voltage Vbd is approximately 2 V. ### Claim 21 (depends on 1) An energy storage device according to claim 1, wherein said electrodes comprise copper, m is equal to 7, the insulating dielectric material comprises polyethylene, the conductive material comprises polyaniline (PANI), insulating layer thickness is dins=25 nm, conductive layer thickness is dcond=50 μm, and a breakdown voltage Vbd is approximately 4 V.