Multi-gate device and method of fabrication thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Ching-Fang Huang, Carlos H. Diaz, Chih-Hao Wang, Wen-Hsing Hsieh, Ying-Keung Leung
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Abstract
A semiconductor device includes a source/drain feature disposed over a substrate. The source/drain feature includes a first nanowire, a second nanowire disposed over the first nanowire, a cladding layer disposed over the first nanowire and the second nanowire and a spacer layer extending from the first nanowire to the second nanowire. The device also includes a conductive feature disposed directly on the source/drain feature such that the conductive feature physically contacts the cladding layer and the spacer layer.
Claims20
A device comprising:
- a source/drain feature disposed over a substrate, the source/drain feature including:
- a first nanowire having a top surface facing away from the substrate, the first nanowire being disposed over an isolation region on the substrate, wherein the isolation region has a first thickness along a direction perpendicular to a top surface of the substrate;
- a second nanowire disposed over the first nanowire, the second nanowire having a bottom surface facing the substrate;
- a cladding layer disposed over sidewalls of the isolation region, the first nanowire and the second nanowire;
- and
- a spacer layer extending from the top surface of the first nanowire to the bottom surface of the second nanowire such that the first nanowire is prevented from interfacing with the second nanowire by the spacer layer, the spacer layer having a second thickness along the direction, wherein the first thickness is greater than the second thickness;
- and
- a conductive feature disposed directly on the source/drain feature such that the conductive feature physically contacts the cladding layer.
A device comprising:
- a source/drain feature disposed over a source/drain region of a substrate, wherein the source/drain feature includes:
- a first nanowire disposed over an isolation region on the substrate, the isolation region having a thickness along a direction perpendicular to a top surface of the substrate;
- a second nanowire disposed over the the first nanowire and is spaced away from the first nanowire along the direction by a distance, wherein the distance is smaller than the thickness;
- a cladding layer wrapping over sidewalls of the isolation region, the first nanowire, and the second nanowire;
- and
- a silicide layer extending from the first nanowire to the second nanowire.
A device comprising:
- a source/drain feature disposed over a source/drain region of a substrate, wherein the source/drain feature includes:
- a first nanowire disposed over an isolation region on the substrate, wherein the isolation region is formed from an oxidized epitaxial layer and has a first thickness along a direction perpendicular to a top surface of the substrate;
- a second nanowire disposed over the first nanowire;
- a third nanowire disposed over the substrate;
- a spacer layer extending from a bottom surface of the second nanowire to a top surface of the first nanowire, the bottom surface of the second nanowire facing the top surface of the first nanowire, the spacer layer having a second thickness along the direction, wherein the first thickness is greater than the second thickness;
- and
- a silicide layer extending from the first nanowire to the third nanowire.
Dependencies are inferred from the claim text.