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US 9,887,176 B2Granted
Semiconductor package
AssigneeChengwei Wu
InventorIou Ming Lou
Life of this patent
Estimating the term…
Abstract
A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.
Claims20
A semiconductor device, comprising:
- a first die, the first die having an L1 side and an S1 side, the L1 side being longer than the S1 side, the L1 side being perpendicular to the S1 side, the first die comprising L1 connection ends and S1 connection ends, the L1 connection ends being disposed on an active surface of the first die, the L1 connection ends being substantially disposed along the L1 side, the S1 connection ends being disposed on the active surface of the first die, the S1 connection ends being substantially disposed along the S1 side;
- a second die, the second die having an L2 side and an S2 side, the L2 side being longer than than the S2 side, the L2 side being perpendicular to the S2 side, the second die comprising a first group of L2 connection ends, a second group of L2 connection ends, and S2 connection ends, the L2 connection ends being substantially disposed along the L2 side;
- a molding material covering the first die and the second die;
- and
- a redistribution structure, the redistribution structure having a first group of traces and a second group of traces, the first group of traces being electrically connected between the S1 connection ends and the first group of L2 connection ends, the second group of traces being electrically connected between the L1 connection ends and the second group of L2 connection ends;
- wherein the S1 side is parallel to the S2 side, no solder bumps are located between the first die and the redistribution structure, and no solder bumps are located between the second die and the redistribution structure.
3 more elements
A semiconductor device, comprising:
- a first die, the first die having an L1 side and an S1 side, the L1 side being perpendicular to the S1 side, the first die having a first active surface, the first die comprising an L1 connection area on the first active surface, the L1 connection area being substantially along the L1 side, the first die comprising an S1 connection area on the first active surface, the S1 connection area being substantially along the S1 side;
- a second die, the second die having an L2 side and an S2 side, the second die having a second active surface, the second die comprising an L2 connection area on the second active surface, the L2 connection area being substantially along the L2 side, the L1 side being parallel to the L2 side;
- and
- a redistribution structure, the redistribution structure having a first group of traces and a second group of traces, the first group of traces being electrically connected between the S1 connection area and the L2 connection area, the second group of traces being electrically connected between the L1 connection area and the L2 connection area;
- wherein an average length of the second group of traces is shorter than that of the first group of traces, no solder bumps are located between the first die and the redistribution structure, and no solder bumps are located between the second die and the redistribution structure.
2 more elements
A semiconductor device, comprising:
- a first die, the first die having a first active surface, the first die having an A1 side, an A2 side, an A3 side, and an A4 side, the A1 side being parallel to the A3 side, the A2 side being parallel to the A4 side, the A2 side being longer than the A1 side, the A1 side being along an A1 axis, the A3 side being along an A3 axis;
- a second die, the second die having a second active surface, the second die having a B1 side, a B2 side, a B3 side, and a B4 side, the B1 side being parallel to the B3 side, the B2 side being parallel to the B4 side, the B2 side being longer than the B1 side, the B1 side being along a B1 axis, the B3 side being along a B3 axis;
- a molding material covering the first die and the second die;
- a redistribution structure;
- a first connection structure, the first active surface being connected to the redistribution structure through the first connection structure;
- and
- a second connection structure, the second active surface being connected to the redistribution structure through the second connection structure;
- wherein the A1 axis intersects the second die, the A3 axis does not intersect the second die, the B1 axis does not intersect the first die, and the B3 axis intersects the first die.
5 more elements
A semiconductor device, comprising:
- a first die, the first die having a first active surface, the first die having an A1 side, an A2 side, an A3 side, and an A4 side, the A1 side being parallel to the A3 side, the A2 side being parallel to the A4 side, the A2 side being longer than the A1 side, the A1 side being along an A1 axis, the A3 side being along an A3 axis;
- a second die, the second die having a second active surface, the second die having a B1 side, a B2 side, a B3 side, and a B4 side, the B1 side being parallel to the B3 side, the B2 side being parallel to the B4 side, the B2 side being longer than the B1 side, the B1 side being along a B1 axis, the B3 side being along a B3 axis;
- a redistribution structure;
- a first connection structure, the first active surface being connected to the redistribution structure through the first connection structure;
- and
- a second connection structure, the second active surface being connected to the redistribution structure through the second connection structure;
- wherein the A1 axis intersects the second die, the A3 axis intersects the second die, the B1 axis does not intersect the first die, the B3 axis does not intersect the first die, no solder bumps are located between the first die and the redistribution structure, and no solder bumps are located between the second die and the redistribution structure.
4 more elements
Dependencies are inferred from the claim text.