# US 9,883,615 B2 · Semiconductor memory device having a heat conduction member > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,883,615 B2 - Document ID: US9883615B2 - Status: Granted - Kind: B2 - Application number: 14/842,151 - Filed: 2015-09-01 - Published: 2016-09-15 - Granted: 2018-01-30 - Earliest claimed: 2015-03-13 - Assignees: Toshiba Memory Corporation - Applicants: Toshiba Memory Corporation - Inventors: Kouei Yoshinaga - Web page: https://patentgrep.com/patent/US9883615B2 ## CPC - G06F 1/20: Cooling means - H05K 7/20754: {Air circulating in closed loop within cabinets} - G06F 1/185: Mounting of expansion boards - G06F 1/187: Mounting of fixed or removable disk drives - H05K 7/20163: {the components being isolated from air flow, e.g. hollow heat sinks, wind tunnels or funnels} - H05K 7/20727: {within server blades for removing heat from heat source} - G11C 5/04: Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A semiconductor memory device includes a substrate having a conductive region on a surface thereof, a semiconductor memory unit, a memory controller, at least one of the semiconductor memory unit and the memory controller being disposed on the substrate, a housing enclosing the substrate, and a heat conduction member in contact with and pressed between the conductive region and a portion of the housing. ## Claims ### Claim 1 A semiconductor memory device, comprising: a substrate having a conductive region on a surface thereof; a semiconductor memory unit; a memory controller, at least one of the semiconductor memory unit and the memory controller being disposed on the substrate; a housing enclosing the substrate; and a heat conduction member in contact with and pressed between the conductive region and a portion of the housing, wherein the heat conduction member is made of an electrically-insulating material. ### Claim 2 (depends on 1) The semiconductor memory device according to claim 1, wherein the portion of the housing extends into an interior of the housing from a side thereof. ### Claim 3 (depends on 1) The semiconductor memory device according to claim 1, wherein the heat conduction member has an elasticity that is greater than those of the substrate and the housing. ### Claim 4 (depends on 1) The semiconductor memory device according to claim 1, wherein the conductive region is disposed at a position adjacent to an edge of the substrate. ### Claim 5 (depends on 1) The semiconductor memory device according to claim 1, wherein the semiconductor memory unit and the memory controller are both disposed on the substrate, and the heat conduction member is disposed at a position that is closer to the semiconductor memory unit than to the memory controller. ### Claim 6 (depends on 1) The semiconductor memory device according to claim 1, wherein the substrate includes a conductive layer, an insulating layer having a portion in which the conductive region is formed, and a plurality of vias electrically connecting the conductive layer and the conductive region. ### Claim 7 (depends on 1) The semiconductor memory device according to claim 1, wherein the housing includes a first cover member covering a portion of the surface of the substrate, a second cover member covering another portion of the surface of the substrate, and a heat insulating member disposed between the first cover member and the second cover member. ### Claim 8 (depends on 1) The semiconductor memory device according to claim 1, wherein the housing includes a top cover member and a bottom cover member, and the heat conduction member is pressed between the conductive region and the top cover member. ### Claim 9 (depends on 8) The semiconductor memory device according to claim 8, wherein the substrate has a second conductive region on a second surface thereof that is opposite to the surface, the semiconductor memory device further comprising: a second heat conduction member in contact with and pressed between the second conductive region and the bottom cover member. ### Claim 10 A semiconductor memory device, comprising: a first substrate having a first conductive region on a first surface thereof, and a second conductive region and a connector on a second surface thereof, the second surface being opposite to the first surface; a second substrate positioned on the second surface side of the first substrate and electrically connected to the connector; a semiconductor memory unit disposed on the first substrate; a memory controller disposed on the second substrate; a housing enclosing the first and second substrates and including a top cover member and a frame member; a first heat conduction member in contact with and pressed between the first conductive region and the top cover member; and a second heat conduction member in contact with and pressed between the second conductive region and the frame member. ### Claim 11 (depends on 10) The semiconductor memory device according to claim 10, wherein the first conductive region is disposed at a position corresponding to the connector. ### Claim 12 (depends on 10) The semiconductor memory device according to claim 10, wherein the first and second conductive regions are disposed at positions of the first substrate corresponding to each other. ### Claim 13 (depends on 10) The semiconductor memory device according to claim 10, wherein the second substrate has a third conductive region on a surface facing the first substrate, the semiconductor memory device further comprising: a third heat conduction member in contact with and pressed between the third conductive region and the frame member. ### Claim 14 (depends on 13) The semiconductor memory device according to claim 13, wherein the second and third heat conduction members are disposed at positions of the frame member corresponding to each other. ### Claim 15 A semiconductor memory device, comprising: a substrate having a conductive region on a surface thereof; a semiconductor memory unit; a memory controller, at least one of the semiconductor memory unit and the memory controller being disposed on the substrate; a housing enclosing the substrate; and a heat conduction member in contact with and between the conductive region and a portion of the housing, such that heat is transferred from the conductive region to the portion of the housing therethrough, wherein the heat conduction member is made of an electrically-insulating material. ### Claim 16 (depends on 15) The semiconductor memory device according to claim 15, wherein the portion of the housing extends into an interior of the housing. ### Claim 17 (depends on 15) The semiconductor memory device according to claim 15, wherein the heat conduction member has an elasticity that is greater than those of the substrate and the housing. ### Claim 18 (depends on 15) The semiconductor memory device according to claim 15, wherein the conductive region is disposed near an edge of the substrate.