# US 9,882,526 B2 · Alternating bias hot carrier solar cells

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- Number: US 9,882,526 B2
- Document ID: US9882526B2
- Status: Granted
- Kind: B2
- Application number: 14/724,426
- Filed: 2015-05-28
- Published: 2015-11-26
- Granted: 2018-01-30
- Earliest claimed: 2010-07-09
- Assignees: Ostendo Technologies, Inc.
- Applicants: Ostendo Technologies, Inc.
- Inventors: Hussein S. El-Ghoroury; Dale A. McNeill; Selim E. Guncer
- Web page: https://patentgrep.com/patent/US9882526B2

## CPC

- H02S 40/34: comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H02S 40/32: comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
- H10F 10/144: comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
- H10F 10/146: {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side}
- H10F 10/162: comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
- H10F 10/163: comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
- H10F 10/167: comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
- H10F 77/122: comprising only Group IV materials
- H10F 77/123: comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F 77/124: comprising only Group III-V materials, e.g. GaAs
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/143: {comprising quantum structures}
- H10F 77/1433: {Quantum dots}
- H10F 77/146: {Superlattices; Multiple quantum well structures}
- H10F 77/955: {for photovoltaic devices}
- B82Y 99/00: Subject matter not provided for in other groups of this subclass
- Y02E 10/541: CuInSe2 material PV cells
- Y02E 10/543: Solar cells from Group II-VI materials
- Y02E 10/544: Solar cells from Group III-V materials
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- Y10S 977/755: Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S 977/774: Exhibiting three-dimensional carrier confinement, e.g. quantum dots
- Y10S 977/948: Energy storage/generating using nanostructure, e.g. fuel cell, battery
- H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure in order to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

## Claims

### Claim 1

A solar cell comprising:
a core solar cell having first and second contacts;
a load resistance having first and second terminals;
an oscillator having first and second terminals;
first and second capacitors, each having first and second terminals;
first and second resistors, each having first and second terminals; and
a diode having first and second terminals;
first terminals of the oscillator, first and second resistors, the second capacitor and the load resistance being coupled together;
the second terminal of the oscillator being coupled to the first terminal of the first capacitor;
second terminals of the second capacitor and the second resistor being coupled together and to the first terminal of the diode;
the second terminal of the first capacitor being coupled to the second terminal of the first resistor, to the second terminal of the diode and to the first contact of the core solar cell, the second contact of the core solar cell being coupled to the load resistance;
whereby the oscillator, the first and second capacitors, the first and second resistors and the diode form a temporally varying load resistor.

### Claim 2 (depends on 1)

The solar cell of claim 1 wherein the frequency of oscillation of the oscillator fs=(Tb)−1, where Tb is equal to or shorter than the hot carrier cooling time τc.

### Claim 3 (depends on 1)

The solar cell of claim 1 wherein:
the temporally varying load resistance is coupled to and causes a solar cell voltage between first and second contacts to periodically alternate between minimum and maximum solar cell voltages, the minimum solar cell voltage being a solar cell voltage at which the core solar cell internal built-in electric field is sufficiently high to cause transport of photo-excited carriers generated within the core solar cell toward the first and second contacts, the maximum solar cell voltage being substantially equal to the maximum of the electrochemical potential of the photo-excited carriers generated within the core solar cell.

### Claim 4 (depends on 3)

The solar cell of claim 3 wherein materials of the core solar cell are selected from the group consisting of silicon (Si), gallium arsenide (GaAs), cadmium telluride (CdTe), copper indium diselenide (CIS), copper indium gallium diselenide (CIGS), or alloys of III-V materials, thereby allowing the hot carriers to be extracted from the core solar cell before cooling down within the core solar cell materials or the first and second contacts.

### Claim 5 (depends on 3)

The solar cell of claim 3 wherein the core solar cell further comprises optical confinement structures in the form of micro cavities having reflective sidewalls, reflective backside and textured topside;
the reflective sidewalls of the optical confinement micro cavities being electrically connected to a micro mesh and a contact pad at the backside of the micro cavities to interconnect the micro mesh on the top side of the micro cavities to the contact pad at the backside of the micro cavities.

### Claim 6 (depends on 5)

The solar cell of claim 5 wherein the optical confinement micro cavities provide a distance between the first and second contacts to be sufficiently short to enable the extraction of hot carriers from the core solar cell.

### Claim 7 (depends on 5)

The solar cell of claim 5 wherein the micro cavities further enhance the efficiency of the core solar cell by enabling the confinement and subsequent absorption of photons generated within the core solar cell and subsequent extraction of photo-excited carriers caused by the internally emitted photons from the core solar cell.

### Claim 8 (depends on 1)

The solar cell of claim 1 wherein the core solar cell is comprised of a III-V ternary alloy indium gallium nitride (InxGa1-x,N), wherein the subscript “x” represents the ratio of indium incorporation within the ternary alloy InGaN, the core solar cell incorporating multiple quantum wells wherein the band-gap of the multiple quantum wells is graded, by varying “x” across the multiple quantum wells from a low to a high value to create a multiplicity of quantum wells having a band-gap that spans across the band-gap of gallium nitride, to provide a range of different band-gap values for the quantum wells with the range of different band-gap values being below the core solar cell band-gap value.

### Claim 9 (depends on 8)

The solar cell of claim 8 wherein the core solar cell has a solar spectrum extending across most of the energy spectrum of solar radiation.

### Claim 10 (depends on 1)

The solar cell of claim 1 wherein materials of the core solar cell are selected from the group consisting of silicon (Si), gallium arsenide (GaAs), cadmium telluride (CdTe), copper indium diselenide (CIS), copper indium gallium diselenide (CIGS), and alloys of III-V materials.

### Claim 11 (depends on 1)

The solar cell of claim 1 wherein the core solar cell comprises either quantum confinement structures or optical confinement structures or both.

### Claim 12 (depends on 1)

The solar cell of claim 1 wherein the core solar cell comprises quantum confinement structures comprised of quantum wells or quantum dots.

### Claim 13 (depends on 12)

The solar cell of claim 12 wherein the quantum confinement structures comprise multiple quantum wells wherein the band-gap of the multiple quantum wells is graded to provide a range of different band-gap values for the quantum wells with the range of different band-gap values being below the core solar cell band-gap value.

### Claim 14 (depends on 12)

The solar cell of claim 12 wherein:
materials of the core solar cell are selected from the group consisting of silicon (Si), gallium arsenide (GaAs), cadmium telluride (CdTe), copper indium diselenide (CIS), copper indium gallium diselenide (CIGS), and alloys of III-V materials; and
the quantum confinement structures allow the extraction of photo-excited carriers within the core solar cell over a range of extraction energies that substantially matches the energy profile of the photo-excited carriers generated within the core solar cell that spans from substantially below the band-gap energy of the core solar cell materials to an energy that is substantially equal to the maximum electrochemical potential of the photo-excited carriers to be extracted from the core solar cell.

### Claim 15 (depends on 1)

The solar cell of claim 1 wherein the core solar cell is a bulk material solar cell.

### Claim 16 (depends on 1)

The solar cell of claim 1 wherein the core solar cell incorporates quantum confinement.