Resonant type high frequency power supply device and switching circuit for resonant type high frequency power supply device
AssigneeMitsubishi Electric Engineering Company Limited
InventorsYoshiyuki Akuzawa, Kiyohide Sakai, Toshihiro Ezoe, Yuki Ito
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Abstract
Disclosed is a resonant type high frequency power supply device provided with a power element that performs a switching operation, the power supply device including a high frequency pulse drive circuit 1 that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power element to drive the power element, wherein a voltage signal from the high frequency pulse drive circuit 1 is subjected to partial resonance by an impedance of a signal line of the voltage signal and a parasitic capacitance of the power element.
Claims12
A high frequency power supply device, comprising:
- a power element that performs a switching operation, said power element having a gate terminal and a parasitic capacitance:
- and a high frequency pulse drive circuit that generates a pulse-shaped voltage signal for driving the gate of said power element through a connection having an impedance, said pulse-shaped voltage signal having a high frequency exceeding 2 MHz, wherein a peak of a voltage signal applied to said gate terminal is higher than an amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit due to the parasitic capacitance of said power element and the impedance of the connection between said high frequency pulse drive circuit and said gate terminal;
- wherein:
- said parasitic capacitance and said impedance cause said pulse-shaped voltage signal to resonate so that said peak of said voltage signal applied to said gate terminal becomes higher than said amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit.
A switching circuit for a high frequency power supply device, said switching circuit comprising:
- a power element that performs a switching operation and being used for the high frequency power supply device, said power element including a gate terminal and a parasitic capacitance;
- and a high frequency pulse drive circuit that generates a pulse-shaped voltage signal for driving said power element through a connection having an impedance, said pulse-shaped voltage signal having a high frequency exceeding 2 MHz, wherein a peak of a voltage signal applied to said gate terminal is higher than an amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit due to the parasitic capacitance of said power element and the impedance of the connection between said high frequency pulse drive circuit and said gate terminal;
- wherein:
- said parasitic capacitance and said impedance cause said pulse-shaped voltage signal to resonate so that said peak of said voltage signal applied to said gate terminal becomes higher than said amplitude of said pulse-shaped voltage signal generated by said high frequency pulse drive circuit.
Dependencies are inferred from the claim text.