# US 9,882,348 B2 · Induction of force performed by the semiconductor laser diodes

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- Number: US 9,882,348 B2
- Document ID: US9882348B2
- Status: Granted
- Kind: B2
- Application number: 13/919,315
- Filed: 2013-06-17
- Published: 2014-12-18
- Granted: 2018-01-30
- Earliest claimed: 2013-06-17
- Applicants: Elio Battista Porcelli
- Inventors: Elio Battista Porcelli
- Web page: https://patentgrep.com/patent/US9882348B2

## CPC

- H01S 5/06: Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S 5/02212: Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Until now, the laser beam light is the main feature to be provided by semiconductor laser diodes. The highly ordered direct current of charge carriers injected into the active region of these electronic components above the lasing threshold can be used in innovative ways. This attribute is associated with a new theoretical concept when all particles which are part of macroscopic objects are widely coupled to each other via quantum entanglements—it can generate a distance force induction and a self-induction of force. Considering this, a force can be inducted in the external objects—thrusting them—and a force can be inducted in the own semiconductor laser diode structure for its self propulsion.

## Claims

### Claim 1

A method for using a semiconductor laser diode to produce an induction force in other external objects or particles, as well as producing a self-induction force, comprising the steps of:
positioning a projection area of a resonant cavity of the semiconductor laser diode according to its direct current flow direction and external objects and particles;
generating the induction force and the self-induction force above a lasing light current threshold state by the semiconductor laser diode; and
initiating the induction force to the external objects and particles by the ordered charge carriers of highly concentrated current of the semiconductor laser diode taking into account a preexisting state of generalized quantum entanglements between all parts of the semiconductor laser diode and the external objects and particles.