Power semiconductor module
AssigneeFuji Electric Co., Ltd.
InventorYuki Inaba
Life of this patent
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Abstract
In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.
Claims18
A power semiconductor module comprising:
- a semiconductor element having one surface and another surface opposite to the one surface;
- a lead terminal electrically and thermally connected to the semiconductor element;
- a first solder that bonds the lead terminal and the one surface of the semiconductor element;
- an insulating substrate including an insulating plate having one surface and another surface opposite to the one surface, a circuit layer arranged on the one surface of the insulating plate, and a metal foil arranged on the other surface of the insulating plate;
- a second solder that bonds the other surface of the semiconductor element and the circuit layer of the insulating substrate;
- and
- a resin that seals at least the semiconductor element, the lead terminal, the first solder, and the insulating substrate,
- wherein a 0.2% yield strength of the first solder is less than a 0.2%-yield strength of the second solder.
Dependencies are inferred from the claim text.