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US 9,881,802 B2Granted
Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
AssigneeHitachi Chemical Company, Ltd.
InventorTomohiro Iwano
Life of this patent
Estimating the term…
Abstract
A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include a tetravalent metal element hydroxide, and produce a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×105 G.
Claims25
A slurry comprising abrasive grains and water,
- the abrasive grains including a hydroxide of tetravalent cerium, and the abrasive grains including a property of producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×105 G.
A polishing liquid comprising abrasive grains, an additive and water,
- the abrasive grains including a hydroxide of tetravalent cerium, and the abrasive grains including a property of producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×105 G.
Dependencies are inferred from the claim text.