Compound semiconductor photonic integrated circuit with dielectric waveguide
AssigneeBB Photonics Inc.
InventorsMiroslaw Florjanczyk, William Ring
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Abstract
A photonic integrated circuit (PIC) is grown by epitaxy on a substrate. The PIC includes at least one active element, at least one passive element, and a dielectric waveguide. The at least one active and passive elements are formed over the substrate and are in optical contact with each other. The dielectric waveguide is formed over the substrate, and is in optical contact with the at least one active and passive elements. The at least one active and passive elements each are formed using a III-V compound semiconductor material.
Claims21
A photonic integrated circuit (PIC) grown by epitaxy on a substrate, the PIC comprising:
- at least one active element formed over a first portion of the substrate, wherein the substrate and the at least one active element are formed using a III-V compound semiconductor material;
- a III-V compound semiconductor waveguide formed over a second portion of the substrate, wherein the III-V compound semiconductor waveguide is formed from a III-V compound semiconductor structure, and wherein the III-V compound semiconductor structure is formed by etching the substrate;
- and
- a dielectric waveguide, formed over a third etched portion of the substrate, such that the dielectric waveguide is in optical contact with the at least one active element by way of the III-V compound semiconductor waveguide, and abuts the III-V compound semiconductor waveguide.
A method for manufacturing a photonic integrated circuit, the method comprising:
- providing a substrate, wherein the substrate is formed using a III-V compound semiconductor material;
- providing an active element over a first portion of the substrate, wherein the active element is formed from a III-V compound semiconductor material;
- providing a III-V compound semiconductor structure by etching a second portion of the substrate, wherein the III-V compound semiconductor structure includes a first plurality of layers;
- etching a plurality of vertical features within at least one of a third portion of the substrate and a predetermined portion of the III-V compound semiconductor structure;
- and
- depositing a first dielectric structure comprising a second plurality of layers upon the substrate such that the first dielectric structure abuts the plurality of vertical features.
Dependencies are inferred from the claim text.