Method for slicing semiconductor single crystal ingot
AssigneeSumco Techxiv Corporation
InventorHiroshi Noguchi
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Abstract
An amount of warp of a wafer is not only reduced, but the amount of warp of the wafer is also accurately controlled to a desired amount. The present invention relates to a method for slicing a semiconductor single crystal ingot, by which a cylindrical semiconductor single crystal ingot is bonded to and held by a holder in a state where the ingot is rotated at a predetermined rotation angle around a crystal axis of the ingot different from a center axis of a cylinder of this ingot and the ingot is sliced by a cutting apparatus in this state. The predetermined rotation angle at the time of bonding and holding the ingot with the use of the holder in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount.
Claims5
A method for slicing a semiconductor single crystal ingot, comprising:
- bonding a cylindrical semiconductor single crystal ingot to a holder so that that the ingot is positioned and held at a predetermined rotation angle around a crystal axis of the ingot, the crystal axis being different from a center axis of the cylinder of the ingot, and
- slicing the ingot that is positioned and held at the predetermined rotation angle with a cutting apparatus,
- wherein:
- an orientation flat or a notch of the ingot is determined as a rotation reference portion, a perpendicular drawn from the crystal axis of the ingot to the rotation reference portion is determined as a reference line, a rotation angle from a vertical line to the reference line is determined as the predetermined rotation angle, and the predetermined rotation angle is determined in such a manner that an amount of warp of a wafer sliced out by the cutting apparatus becomes a predetermined amount.
Dependencies are inferred from the claim text.