US 9,875,892 B2Granted

Method of forming a photoresist layer

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsChun-Wei Chang, Chih-Chien Wang, Wang-Pen Mo, Hung-Chang Hsieh

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Abstract

A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.

Claims20

Dependent claims

A method comprising:

providing a wafer having a first surface;
dispensing a first material over the first surface of the wafer during a first spin cycle, a second spin cycle after the first spin cycle, and a third spin cycle after the second spin cycle,
wherein the first spin cycle includes spinning the wafer at a first speed for a first period of time and spinning the wafer at a second speed for a second period of time that is after the first period of time, wherein the second speed is less than the first speed,
wherein the second spin cycle includes spinning the wafer at a third speed for a third period of time and spinning the wafer at a fourth speed for a fourth period of time that is after the third period of time, wherein the fourth speed is less than the third speed and the second speed is less than the third speed,
wherein the third spin cycle includes spinning the wafer at a fifth speed for a fifth period of time;
and
dispensing a second material over the first surface of the wafer including the first material, during a fourth spin cycle after the first, second, and third spin cycles, wherein the second material is different from the first material.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/707,387Filed 8 May 2015 · continuation
Priority: 4 Sep 2012
Published: US 2015/0243500 A127 Aug 2015
Granted: 23 Jan 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 72/0448
Apparatus for manufacture or treatment: apparatus for applying a liquid, a resin, an ink or the like
G03F 7/162
Coating processes; Apparatus therefor: coating on a rotating support, e.g. using a whirler or a spinner
H10P 14/6342
Deposition processes: liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
H10P 76/20
Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography: of masks comprising organic materials

Family

Application13/602,465Parent of this continuation · filed 4 Sep 2012
US 9,028,915 B2Parent of this continuation · filed 12 May 2015
US 2015/0243500 A1Pre-grant publication · published 27 Aug 2015
US 2014/0065843 A1Published application
US 9,875,892 B2This patent

From the US filing history. Foreign family members aren’t listed.