# US 9,873,108 B2 · Metal oxide mesocrystal, and method for producing same

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- Number: US 9,873,108 B2
- Document ID: US9873108B2
- Status: Granted
- Kind: B2
- Application number: 14/765,283
- Filed: 2013-12-02
- Published: 2016-01-07
- Granted: 2018-01-23
- Earliest claimed: 2013-01-31
- Assignees: Japan Science and Technology Agency
- Applicants: Japan Science and Technology Agency
- Inventors: Tetsuro Majima; Takashi Tachikawa; Zhenfeng Bian
- Web page: https://patentgrep.com/patent/US9873108B2

## CPC

- B01J 23/80: with zinc, cadmium or mercury
- B01J 21/063: {Titanium; Oxides or hydroxides thereof}
- B01J 21/066: {Zirconium or hafnium; Oxides or hydroxides thereof}
- B01J 23/06: of zinc, cadmium or mercury
- B01J 23/10: of rare earths
- B01J 23/72: Copper
- B01J 23/745: Iron
- B01J 23/75: Cobalt
- B01J 23/755: Nickel
- B01J 35/39: Photocatalytic properties
- B01J 35/45: Nanoparticles
- B01J 35/612: {less than 10 m2/g}
- B01J 35/613: {10-100 m2/g}
- B01J 35/647: {2-50 nm}
- B01J 35/70: characterised by their crystalline properties, e.g. semi-crystalline (catalysts comprising carbon B01J21/18; molecular sieves B01J29/00)
- B01J 37/0203: {the impregnation liquid containing organic compounds}
- B01J 37/12: Oxidising
- C01B 13/18: by thermal decomposition of compounds, e.g. of salts or hydroxides
- C01G 1/02: Oxides
- C01G 3/02: Oxides; Hydroxides
- C01G 9/006: {Compounds containing zinc, with or without oxygen or hydrogen, and containing two or more other elements}
- C01G 9/02: Oxides; Hydroxides
- C01G 23/053: Producing by wet processes, e.g. hydrolysing titanium salts
- C01G 53/04: Oxides
- C01G 53/40: Complex oxides containing nickel and at least one other metal element
- C30B 9/12: Salt solvents, e.g. flux growth
- C30B 19/08: Heating of the reaction chamber or the substrate
- C30B 29/16: Oxides
- C30B 29/225: {based on rare earth copper oxides, e.g. high T-superconductors}
- H01B 1/08: oxides
- B01J 2235/00: Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties
- B01J 2235/15: X-ray diffraction
- B01J 2235/30: Scanning electron microscopy; Transmission electron microscopy
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2002/84: by UV- or VIS- data
- C01P 2004/04: obtained by TEM, STEM, STM or AFM
- C01P 2004/62: Submicrometer sized, i.e. from 0.1-1 micrometer
- C01P 2004/64: Nanometer sized, i.e. from 1-100 nanometer
- C01P 2006/12: Surface area
- B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

Various metal oxide mesocrystals can be synthesized in a simple manner by a method for producing a metal oxide mesocrystal, the method comprising the step of annealing an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600° C. Composite mesocrystals consisting of a plurality of metal oxides or an alloy oxide can also be provided.

## Claims

### Claim 1

A method for producing a metal oxide mesocrystal, the method comprising the step of maintaining an aqueous precursor solution comprising one or more metal oxide precursors, an ammonium salt, a surfactant, and water at 300 to 600° C.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the one or more metal oxide precursors are a metal nitrate and/or a metal fluoride salt.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the ammonium salt is NH4NO3.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the surfactant is at least one member selected from the group consisting of anionic surfactants, cationic surfactants, amphoteric surfactants, and nonionic surfactants.

### Claim 5 (depends on 1)

The method according to claim 1, wherein, in the aqueous precursor solution, the molar ratio of metal oxide precursor to surfactant is 1 to 1000:1, and the molar ratio of ammonium salt to surfactant is 1 to 1000:1.