Smart multi-level RF pulsing methods

A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power to be performed, the method comprising:

• providing, from a first RF generator, a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, wherein the first, second and third power levels of the first multi-level RF power waveform are different from each other;
• providing, from a second RF generator and after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, wherein the first, second and third power levels of the second multi-level RF power waveform are different from each other;
• and
• processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce feature on the substrate having an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.

A method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power, comprising:

• providing, from a first RF generator, a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, wherein the first, second and third power levels of the first multi-level RF power waveform are different from each other;
• providing, from a second RF generator and after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, wherein the first, second and third power levels of the second multi-level RF power waveform are different from each other;
• providing, from a third RF generator and after a second delay period, a third multi-level RF power waveform to the process chamber, the third multi-level RF power waveform having at least a first power level during a first pulse duration and a second power level during a second pulse duration, wherein the first, second and third power levels of the third multi-level RF power waveform are different from each other;
• and
• processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce features on the substrate having an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min, wherein processing the substrate using the multi-level pulsed RF power produces a mask selectivity of greater than 5:1 and reduced profile bowing effects having a delta CD less than 20 nm.