Switch stand-by mode isolation improvement
AssigneeSkyworks Solutions, Inc.
InventorChu-hsiung Ho
Life of this patent
Estimating the term…
Abstract
Systems, apparatuses and methods are disclosed providing a semiconductor die comprising a semiconductor substrate and a radio-frequency (RF) switch including one or more series field-effect transistors (FETs) and one or more shunt FETs, each of the one or more series FETs and one or more shunt FETs having a respective gate node, the RF switch being configured to receive an RF signal from a power amplifier module and provide the RF signal to an antenna. The semiconductor die may further comprise an internal regulator voltage source configured to provide an internal regulator voltage when the RF switch is in a stand-by mode and shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt FETs when the RF switch is in the stand-by mode.
Claims20
A semiconductor die comprising:
- a semiconductor substrate;
- a radio-frequency switch including one or more series field-effect transistors and one or more shunt field-effect transistors, each of the one or more series field-effect transistors and one or more shunt field-effect transistors having a respective gate node, the radio-frequency switch being configured to receive an radio-frequency signal from a power amplifier module and provide the radio-frequency signal to an antenna;
- an internal regulator voltage source configured to provide an internal regulator voltage when the radio-frequency switch is in a stand-by mode;
- and
- shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt field-effect transistors when the radio-frequency switch is in the stand-by mode.
A shunt arm control circuit for a switching device comprising:
- a first input node connected to a voltage regulator voltage;
- a second input node connected to an internal regulator voltage;
- a third input node connected to a charge pump voltage;
- and
- connection circuitry configured to connect the first input node to gates of one or more shunt field-effect transistors of a switching device when the switching device is in an active ON mode, to connect the second input node to the gates of the one or more shunt field-effect transistors when the switching device is in a stand-by mode, and to connect the third input node to the gates of the one or more shunt field-effect transistors when the switching device is in an active OFF mode.
A radio-frequency device comprising:
- a transceiver configured to generate a radio-frequency signal;
- a power amplifier in communication with the transceiver, the power amplifier configured to amplify the radio-frequency signal;
- an radio-frequency switch including one or more series field-effect transistors and one or more shunt field-effect transistors, each of the one or more series field-effect transistors and one or more shunt field-effect transistors having a respective gate node, the radio-frequency switch being configured to receive the amplified radio-frequency signal and provide the amplified radio-frequency signal via the one or more series field-effect transistors;
- an internal regulator voltage source configured to provide an internal regulator voltage when the radio-frequency switch is in a stand-by mode;
- shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt field-effect transistors when the radio-frequency switch is in the stand-by mode;
- and
- an antenna configured to receive the amplified radio-frequency signal and facilitate transmission of the amplified radio-frequency signal.
Dependencies are inferred from the claim text.