Back to results
US 9,871,341 B2Granted
Laser on silicon made with 2D material gain medium
AssigneeInternational Business Machines Corporation
InventorsNing Li, Devendra K. Sadana, Jinghui Yang
Life of this patent
Estimating the term…
Abstract
A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.
Claims20
A laser structure, comprising:
- a monocrystalline substrate;
- a first dielectric layer formed on the substrate;
- a light emitting diode (LED) formed on the first dielectric layer wherein the LED acts as an optical pump;
- a multi-quantum well formed on the first dielectric layer having a plurality of alternating layers, the alternating layers including:
- a dielectric layer having a sub-wavelength thickness;
- and
- a monolayer of a two dimensional material.
4 more elements
A laser structure, comprising:
- a silicon substrate;
- a buffer layer formed on the silicon substrate;
- a light emitting diode (LED) formed on the buffer layer;
- a first dielectric layer formed on the LED;
- and
- a multi-quantum formed on the first dielectric layer and having a plurality of alternating layers, the alternating layers including:
- a dielectric layer having a sub-wavelength thickness;
- and
- a monolayer of a two dimensional material.
6 more elements
A method for forming a laser structure, comprising:
- forming a buffer layer on a silicon substrate;
- forming a light emitting diode (LED) on the buffer layer from III-V materials;
- forming a dielectric layer on the LED;
- stretching a monolayer of a two dimensional material on the dielectric layer;
- forming a next dielectric layer on the monolayer of the two dimensional material;
- and
- repeating formation of alternating monolayers of the two dimensional material and the dielectric layers to form a multi-quantum well laser.
4 more elements
A laser structure, comprising:
- a substrate;
- a first dielectric layer formed on the substrate;
- a multi-quantum formed on the first dielectric layer having a plurality of alternating layers, the alternating layers including:
- a dielectric layer having a sub-wavelength thickness;
- and
- a monolayer of a two dimensional material;
- and
- a metal contact formed on the multi-quantum well to form a plasmonic laser.
5 more elements
Dependencies are inferred from the claim text.