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US 9,871,198 B2Granted
Method for manufacturing a resistive random access memory device
AssigneeMacronix International Co., Ltd.
InventorsYu-Yu Lin, Feng-Min Lee
Life of this patent
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Abstract
A method for manufacturing a resistive memory device is disclosed and comprises following steps. Firstly, a bottom electrode is formed over a substrate. Next, an oxidation process is performed to the bottom electrode to form a metal oxide layer, wherein a hydrogen plasma and an oxygen plasma are provided during the oxidation process. Then, a top electrode is formed on the metal oxide layer.
Claims17
A method for manufacturing a resistive random access memory (ReRAM) device, comprising:
- forming a bottom electrode over a substrate;
- performing an oxidation process to the bottom electrode to form a metal oxide layer, wherein a hydrogen plasma and an oxygen plasma are provided during the oxidation process;
- and
- forming a top electrode on the metal oxide layer;
- wherein the oxidation process is conducted in a temperature less than 300° C.,
- wherein a ratio of the hydrogen plasma to the oxygen plasma is larger than 0:1 and not more than 20:1.
3 more elements
A method for manufacturing a ReRAM device, comprising:
- forming a bottom electrode over a substrate;
- performing an oxidation process to the bottom electrode to form a metal oxide layer having a thickness larger than 10 nm, wherein a hydrogen plasma and an oxygen plasma are provided during the oxidation process and the oxidation process is conducted in a temperature less than 300° C.;
- and
- forming a top electrode on the metal oxide layer,
- wherein a ratio of the hydrogen plasma to the oxygen plasma is larger than 0:1 and not more than 20:1.
2 more elements
Dependencies are inferred from the claim text.