Semiconductor memory device

A semiconductor memory device comprising:

• a plurality of first conductive lines which are stacked in a first direction above a semiconductor substrate and extend in a second direction along to the semiconductor substrate;
• a second conductive line which extends in the first direction;
• a semiconductor layer which is arranged between the first conductive lines and the second conductive line and extends in the first direction;
• a conductive layer which is in contact with a bottom surface of the semiconductor layer and includes a first impurity of a first conductivity type;
• and
• a variable resistance film which is arranged between the first conductive lines and the semiconductor layer,
• the semiconductor layer having a first semiconductor part which is arranged from the bottom surface of the semiconductor layer to a position equal to or lower than a bottom surface of the first conductive line at a lowermost layer in the first direction and includes a second impurity of a second conductivity type different from the first conductivity type.