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US 9,871,196 B2Granted
Methods of forming memory devices having electrodes comprising nanowires
AssigneeOvonyx Memory Technology, LLC
InventorsJun Liu, Michael P. Violette
Life of this patent
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Abstract
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
Claims20
A method of forming a memory device, the method comprising:
- forming a generally conical catalytic structure comprising a base coupled to a conductive pad and a tip;
- and
- catalyzing formation of only a single nanowire extending from the tip of the generally conical catalytic structure to define an electrode of the memory device comprising the generally conical catalytic structure, the conductive pad and the single nanowire, wherein an effective cross-sectional area of the tip facilitates formation of only the single nanowire thereon, the effective cross-sectional area of the tip being less than an effective cross-sectional area of the base of the generally conical catalytic structure.
A method of forming a memory device, the method comprising:
- forming a first electrode comprising:
- forming an effective cross-sectional area of a tip of a generally conical catalytic structure to facilitate formation of only a single nanowire thereon;
- forming a conductive pad on a substrate;
- disposing catalyst material on the conductive pad to form a generally conical catalytic structure having a base coupled to the conductive pad and a tip exhibiting the effective cross-sectional area, wherein the effective cross-sectional area of the tip is less than an effective cross-sectional area of the base;
- and
- extending only a single nanowire from the tip of the generally conical catalytic structure.
3 more elements
A method of forming a memory device, the method comprising:
- forming at least one memory cell, comprising:
- forming a conductive pad on a substrate;
- disposing conductive catalyst material to form a generally conical catalytic structure having a base coupled to the conductive pad;
- forming the generally conical catalytic structure to have a tip with an effective cross-sectional area to facilitate formation of only a single nanowire thereon, wherein the effective cross-sectional area of the tip is less than an effective cross-sectional area of the base of the generally conical catalytic structure;
- and
- catalyzing formation of the single nanowire on the tip of the generally conical catalytic structure.
3 more elements
Dependencies are inferred from the claim text.