Ion beam apparatus generating ion beams of bilateral symmetry
AssigneeSamsung Electronics Co., Ltd.
InventorsJongchul Park, Hyungjoon Kwon
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Abstract
A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.
Claims19
An ion beam apparatus comprising:
- a stage on which a substrate can be loaded;
- an ion source part provided over the stage and capable of generating an ion beam;
- and
- an ion beam control part provided between the stage and the ion source part, the ion beam control part capable of controlling an optical path of the ion beam radiated to a surface of the substrate,
- wherein the ion beam control part comprises:
- a first grid and a second grid horizontally spaced apart from each other,
- wherein, during operation, the ion beam is divided into a first ion beam and a second ion beam by the first and second grids,
- wherein, during operation, the first ion beam is guided by the first grid to be radiated to the surface of the substrate at a first incidence angle,
- wherein, during operation, the second ion beam is guided by the second grid to be radiated to the surface of the substrate at a second incidence angle,
- wherein, during operation, the first ion beam and the second ion beam are substantially symmetrically provided with respect to each other about a normal line that is perpendicular to the surface of the substrate, and
- wherein the first incidence angle and the second incidence angle are adjustable by adjusting a tilt angle of the first grid and a tilt angle of the second grid.
An ion beam apparatus, comprising:
- a plasma chamber and a process chamber;
- and
- an ion beam control part arranged between the plasma chamber and the process chamber, wherein the ion beam control part comprises:
- a first grid configured to supply a first ion beam to a substrate to be arranged in the process chamber at a first incidence angle;
- and
- a second grid configured to supply a second ion beam to the substrate to be arranged in the process chamber at a second incidence angle,
- wherein the first incidence angle and the second incidence angle are substantially the same in magnitude, and
- wherein the first ion beam and the second ion beam are substantially symmetrical to each other about a normal line that is perpendicular to the substrate, and
- wherein the first incidence angle and the second incidence angle are adjustable by adjusting a tilt angle of the first grid and a tilt angle of the second grid.
Dependencies are inferred from the claim text.