Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSeung-Mo Noh
Life of this patent
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Abstract
This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer; a magnetic correction layer located under the MTJ structure and operates to reduce an influence of a stray magnetic field generated by the pinned layer; and an under layer located under the magnetic correction layer and including a metal oxide layer.
Claims14
An electronic device comprising a semiconductor memory, wherein the semiconductor memory includes:
- a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein the free layer is located at an undermost portion of the MTJ structure;
- a magnetic correction layer located under the MTJ structure and operates to reduce an influence of a stray magnetic field generated by the pinned layer;
- an under layer located under the magnetic correction layer and including a metal oxide layer;
- and
- a middle layer located between the free layer and the magnetic correction layer, and including a nonmagnetic metal layer, and
- wherein the nonmagnetic metal layer includes Zn, and the metal oxide layer includes ZnO.
An electronic device comprising a semiconductor memory, wherein the semiconductor memory includes:
- a metal oxide under layer;
- a magnetic correction layer located over the metal oxide under layer;
- a nonmagnetic metal middle layer located over the magnetic correction layer;
- a free layer including CoFeB and located over the nonmagnetic metal middle layer;
- a tunnel barrier layer located over the free layer;
- and
- a pinned layer located over the tunnel barrier layer,
- wherein the nonmagnetic metal middle layer includes Zn, and the metal oxide under layer includes ZnO.
Dependencies are inferred from the claim text.