Semiconductor light emitting device package with wavelength conversion layer
AssigneeSamsung Electronics Co., Ltd.
InventorsHak Hwan Kim, Jung Tae Ok
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Abstract
A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.
Claims11
A semiconductor light emitting device package comprising:
- a light emitting diode (LED) chip comprising a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface;
- a dam structure disposed on the first surface of the LED chip, a first outside edge of the dam structure being co-planar with a second outside edge of the LED chip;
- and
- a wavelength conversion layer disposed on first side surfaces of the LED chip, the second surface of the LED chip, and at least one surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.
Dependencies are inferred from the claim text.