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US 9,871,167 B2Granted
Top emitting semiconductor light emitting device
AssigneeKoninklijke Philips N.V.
InventorsBrendan Jude Moran, Marc Andre de Samber, Grigoriy Basin, Norbertus Antonius Maria Sweegers, Mark Melvin Butterworth, Kenneth Vampola, Clarisse Mazuir
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Abstract
Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
Claims17
A method comprising:
- growing a semiconductor structure on a growth substrate and forming a plurality of semiconductor light emitting devices on said growth substrate from said semiconductor structure;
- attaching the plurality of semiconductor light emitting devices on the growth substrate to a carrier;
- while the plurality of semiconductor light emitting devices are attached to the carrier, removing a first portion of the growth substrate between the semiconductor light emitting devices while a plurality of second portions of the growth substrate remains on a top surface of the semiconductor light emitting devices;
- disposing a reflective material in areas between the plurality of second portions of the growth substrate;
- separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material and the semiconductor structure;
- and
- after separating two neighboring semiconductor light emitting devices, removing the carrier;
- wherein after said separating two neighboring semiconductor light emitting devices, each semiconductor light emitting device comprises one of the second portions of the growth substrate on which a portion of the semiconductor structure is grown.
5 more elements
A method comprising
- growing a semiconductor structure on a growth substrate;
- forming the semiconductor structure into a plurality of semiconductor light emitting devices, each having a portion of the growth substrate on a top surface;
- attaching each of the plurality of semiconductor light emitting devices to a carrier;
- attaching a plurality of wavelength converting members directly to top surfaces of the portions of growth substrate on each of the plurality of semiconductor light emitting devices, wherein the wavelength converting member is formed separately from the semiconductor light emitting device;
- disposing a reflective material in areas between any two neighboring ones of the semiconductor light emitting devices, including in between their corresponding portions of the growth substrate, and between their corresponding wavelength converting members;
- separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material;
- and
- after separating two neighboring semiconductor light emitting devices, removing the carrier.
5 more elements
A method comprising:
- attaching a plurality of semiconductor light emitting devices to a carrier;
- disposing a reflective material in areas between the semiconductor light emitting devices;
- separating two neighboring semiconductor light emitting devices, wherein separating comprises cutting the reflective material;
- and
- after separating two neighboring semiconductor light emitting devices, removing the carrier;
- wherein after said separating two neighboring semiconductor light emitting devices, each semiconductor light emitting device comprises a growth substrate on which a semiconductor portion of the semiconductor light emitting device is grown;
- and
- wherein disposing a reflective material in areas between the semiconductor light emitting devices comprises:
- forming a mask layer on first surfaces of the semiconductor light emitting devices;
- forming a reflective layer over the mask layer and sidewalls of the plurality of semiconductor light emitting devices;
- and
- removing the mask layer.
9 more elements
Dependencies are inferred from the claim text.