Nanostructure light emitting device and method of manufacturing the same

A core-shell structure semiconductor light emitting device, comprising:

• a base layer including a first conductivity type semiconductor;
• an insulating layer disposed on the base layer and having a plurality of openings through which regions of the base layer are exposed;
• and
• a plurality of light emitting core-shell structures respectively disposed on the exposed regions of the base layer and each of the plurality of light emitting core-shell structures having a core including a first conductivity type semiconductor and having a side surface and an upper surface, and a shell including an active layer and a second conductivity type semiconductor layer sequentially disposed on the side surface of the core,
• wherein the upper surface of the core is provided as an upper surface of each of the light emitting core-shell structures, and the plurality of the light emitting core-shell structures comprises at least two groups of the light emitting core-shell structures, one group of the light emitting core-shell structures including cores having a cross-sectional area or an interval therebetween different from a cross-sectional area of or an interval between cores of another group of the light emitting core-shell structures,
• wherein the at least two groups of the light emitting core-shell structures emit light having different wavelengths from each other, and the same groups of light emitting core-shell structures emit light having substantially the same wavelength, and
• wherein light of different wavelengths emitted from the at least two groups of light emitting core-shell structures is combined to form white light.