Method of growing nitride single crystal and method of manufacturing nitride semiconductor device

A method of forming a nitride crystal on a substrate, the method comprising steps of:

• forming, on a surface of a substrate containing silicon, a buffer layer including a nucleation layer and a lattice buffer layer;
• and
• forming a stress compensation layer on the lattice buffer layer, the step of forming the stress compensation layer comprising sequentially forming a first nitride semiconductor layer having a lattice constant greater than that of the lattice buffer layer, an intermediate layer having a lattice constant smaller than that of the first nitride semiconductor layer, and a second nitride semiconductor layer on the lattice buffer layer such that the second nitride semiconductor layer is directly on the intermediate layer, and
• forming a light emitting structure on the second nitride semiconductor layer by performing steps of:
• forming a first conductivity-type nitride semiconductor layer on the second nitride semiconductor layer;
• forming an active layer on the first conductivity-type nitride semiconductor layer;
• and
• forming a second conductivity-type nitride semiconductor layer on the active layer,
• wherein at least a portion of the forming of each of the first nitride semiconductor layer, the intermediate layer, and the second nitride semiconductor layer is performed by providing a nitrogen source gas including hydrogen provided at a flow rate of 20000 sccm to 70000 sccm
• while maintaining the substrate at a temperature of 950° C. to 1040° C.