Efficiency enhancement of solar cells using light management
AssigneeThe University of North Carolina at Charlotte
InventorsMohamad-Ali Hasan, Michael A. Fiddy, Terence A. Goveas
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Abstract
A photovoltaic cell includes a junction, formed from an n-type semiconductor material and a p-type semiconductor material, a trench, opening toward the light-incident side of the junction, for trapping reflected light, and two photon conversion layers. A first photon conversion layer, arranged at the light-incident side of the junction, converts photons from a higher energy to a lower energy suitable for absorption by the semiconductor material, and a second photon conversion layer, arranged at the opposite side of the junction, converts photons from a lower energy to a higher energy suitable for absorption by the semiconductor material.
Claims28
A photovoltaic cell comprising:
- a junction formed from an intersection of an n-type semiconductor material and a p-type semiconductor material and having a light-incident side and an opposite side;
- a stepped trench, opening toward the light-incident side of the junction, for trapping reflected light;
- a first photon conversion layer that converts photons from a higher energy to a lower energy suitable for absorption by at least one of the semiconductor materials;
- and
- a second photon conversion layer that converts photons from a lower energy to a higher energy suitable for absorption by at least one of the semiconductor materials;
- wherein the junction is formed to extend continuously through an interior of the photovoltaic cell and is spaced at a distance from the first and second photon conversion layers;
- wherein the stepped trench includes a top, a lowermost surface, and at least one plateau elevated above the lowermost surface but disposed below the top of the stepped trench;
- and
- wherein the at least one plateau is inclined or declined relative to other surfaces of the stepped trench.
A photovoltaic cell comprising:
- a junction formed from an intersection of an n-type semiconductor material and a p-type semiconductor material and having a light-incident side and an opposite side;
- a stepped trench, opening toward the light-incident side of the junction, for trapping reflected light;
- a first photon conversion layer that converts photons from a higher energy to a lower energy suitable for absorption by at least one of the semiconductor materials;
- and
- a second photon conversion layer that converts photons from a lower energy to a higher energy suitable for absorption by at least one of the semiconductor materials;
- wherein the junction is formed to extend continuously through an interior of the photovoltaic cell and is spaced at a distance from the first and second photon conversion layers;
- wherein the stepped trench includes a top, a lowermost surface, and at least one plateau elevated above the lowermost surface but disposed below the top of the stepped trench;
- and
- wherein the lowermost surface is inclined or declined relative to other surfaces of the stepped trench.
A photovoltaic cell comprising:
- a junction formed from an intersection of an n-type semiconductor material and a p-type semiconductor material and having a light-incident side and an opposite side;
- a stepped trench, opening toward the light-incident side of the junction, for trapping reflected light;
- a first photon conversion layer that converts photons from a higher energy to a lower energy suitable for absorption by at least one of the semiconductor materials;
- and
- a second photon conversion layer that converts photons from a lower energy to a higher energy suitable for absorption by at least one of the semiconductor materials;
- wherein the junction is formed to extend continuously through an interior of the photovoltaic cell and is spaced at a distance from the first and second photon conversion layers;
- and
- wherein an upper wall of the stepped trench is inclined or declined relative to other surfaces of the stepped trench.
A photovoltaic cell comprising:
- a junction formed from an intersection of an n-type semiconductor material and a p-type semiconductor material and having a light-incident side and an opposite side;
- a stepped trench, opening toward the light-incident side of the junction, for trapping reflected light;
- a first photon conversion layer that converts photons from a higher energy to a lower energy suitable for absorption by at least one of the semiconductor materials;
- and
- a second photon conversion layer that converts photons from a lower energy to a higher energy suitable for absorption by at least one of the semiconductor materials;
- wherein the junction is formed to extend continuously through an interior of the photovoltaic cell and is spaced at a distance from the first and second photon conversion layers;
- and
- wherein a lower wall of the stepped trench is inclined or declined relative to other surfaces of the stepped trench.
Dependencies are inferred from the claim text.