Solar cell and method of manufacturing the same

A method of manufacturing a solar cell comprising

• an n-type semiconductor substrate having a texture only on a light-receiving surface;
• a first passivation film composed of an silicon nitride film formed over a back surface of the n-type semiconductor substrate;
• a p-type diffusion layer formed over the light-receiving surface of the n-type semiconductor substrate;
• a second passivation film formed over the p-type diffusion layer and composed of an aluminum oxide film;
• an anti-reflection film formed on the second passivation film;
• and
• current extraction electrodes formed on the light-receiving surface side and the back side of the substrate,
• comprising steps of:
• (i) forming the silicon nitride film having a thickness of 150 to 250nm over the back surface of the n-type semiconductor substrate;
• (ii) forming the texture on the light-receiving surface of the n-type semiconductor substrate by immersion of the substrate in a heated alkali solution;
• (iii) forming the p-type diffusion layer over the light-receiving surface of the n-type semiconductor substrate after step (ii), and subsequently removing the boron glass formed on the surface of the n-type semiconductor substrate by use of hydrofluoric acid;
• (iv) then forming over the p-type diffusion layer the second passivation film composed of an aluminum oxide film by an atomic layer deposition method;
• (v) forming the anti-reflection film over the second passivation film;
• and
• (vi) forming the current extraction electrodes on the light-receiving surface side and the back side of the substrate,
• wherein the silicon nitride film serves as a treatment mask during the texture formation in step (ii), as a diffusion mask during the formation of the p-type diffusion layer in step (iii), as an oxidation mask during the formation of the aluminum oxide film in step (iv) and as the first passivation film on the back surface of the substrate of the solar cell, and
• wherein said step of forming current extraction electrodes comprises a step of printing a conductive paste on the silicon nitride film of the back surface side of the substrate, and firing the paste at 600 to 900° C. to sinter the conductive paste and cause it to fire through the silicon nitride film of the back surface side of the substrate to make electrical contact between the current extraction electrode and the substrate.