Protective region for metallization of solar cells
AssigneeSunPower Corporation
InventorsBenjamin Ian Hsia, David Aaron Randolph Barkhouse, Todd Richards Johnson, Michael Cudzinovic
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Abstract
Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a first and second semiconductor regions can be formed in or above a substrate, where a separation region is disposed between the first and second semiconductor regions. A protective region can be formed over the separation region. A first metal layer can be formed over the substrate, where the protective region prevents and/or inhibits damage to the separation region during the formation of the first metal layer. Conductive contacts can be formed over the first and second semiconductor regions.
Claims17
A method of fabricating a solar cell, the method comprising:
- forming a first and second semiconductor regions in or above a substrate, wherein a separation region is disposed between the first and second semiconductor regions;
- forming a polysilicon region over the separation region;
- forming an insulating layer between the polysilicon region and substrate, wherein the insulating layer includes openings;
- forming a first metal layer over the polysilicon region and the insulating layer and within the openings of the insulating layer, wherein the polysilicon region inhibits damage to the separation region during the formation of the first metal layer;
- forming conductive contacts over the first and second semiconductor regions;
- and
- removing the polysilicon region.
A method of fabricating a solar cell, the method comprising:
- forming a first and second semiconductor regions in or above a substrate, wherein a separation region is disposed between the first and second semiconductor regions;
- forming a protective region over the separation region;
- forming an insulating layer between the protective region and substrate, wherein the insulating layer includes openings;
- forming a first metal layer over the protective region and the insulating layer and within the openings of the insulating layer, wherein the protective region inhibits damage to the separation region during the formation of the first metal layer;
- forming a mask over portions of the first metal layer;
- plating a second metal layer to exposed portions of the first metal layer;
- removing the mask;
- and
- performing an etching process to form conductive contacts over the first and second semiconductor regions.
Dependencies are inferred from the claim text.