Solid state imaging apparatus, production method thereof and electronic device
AssigneeSony Corporation
InventorsKyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
Life of this patent
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Abstract
A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.
Claims28
An imaging device, comprising:
- a first substrate including a photoelectric conversion element;
- a second substrate including a wiring layer and at least a part of a logic circuit;
- and
- an insulation region penetrating through at least a silicon layer of the first substrate,
- wherein the first substrate is bonded to the second substrate,
- wherein the insulation region includes a first insulation material and a second insulation material,
- wherein the insulation region is disposed between the wiring layer of the second substrate and a light receiving side of the first substrate in a vertical direction, and
- wherein the insulation region is disposed at a side of a scribe area.
An imaging device, comprising:
- a first substrate including a pixel area having a photoelectric conversion element;
- a second substrate including a wiring layer and at least a part of a logic circuit;
- an insulation region penetrating through at least a silicon layer of the first substrate;
- and
- an electrode pad region including an electrode pad portion disposed at the wiring layer of the second substrate,
- wherein the first substrate is bonded to the second substrate;
- wherein the insulation region includes a first insulation material and a second insulation material,
- wherein the insulation region is disposed between the wiring layer of the second substrate and a light receiving side of the first substrate in a vertical direction, and
- wherein the insulation region is disposed between the electrode pad region and the pixel area in a horizontal direction.
Dependencies are inferred from the claim text.