US 9,871,147 B2Granted

Photodetector

AssigneesSharp Kabushiki Kaisha, The University of Tokyo

InventorsTeruhisa Kotani, Yasuhiko Arakawa, Tetsu Tatsuma

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Abstract

A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.

Claims7

Dependent claims

A photodetector comprising:

a substrate;
a light absorption layer arranged over the substrate, the light absorption layer including a semiconductor layer that includes a quantum well structure that absorbs light of a wavelength depending on the quantum well structure;
a lower contact layer arranged on a side of the light absorption layer, the side being adjacent to the substrate;
a lower electrode provided to contact with the lower contact layer;
an upper contact layer arranged on a side of the light absorption layer, the side being father away from the substrate than the lower contact layer;
and
an upper electrode provided to contact with the upper contact layer,
wherein an uneven structure including shapes of projections or depressions on the side of the upper contact layer away from the substrate is provided, the shapes of projections or depressions each having a size less than or equal to a wavelength of incident light in the semiconductor layer and greater than or equal to half the wavelength, having a polarization selectivity, and being periodically arranged in at least one direction.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/352,632Filed 16 Nov 2016
Priority: JP 2015-22585918 Nov 2015
Published: US 2017/0141243 A118 May 2017
Granted: 16 Jan 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10F 77/206
Electrodes: for devices having potential barriers
H10F 30/10
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors: the…
H10F 77/1246
Comprising only Group III-V materials, e.g. GaAs: iII-V nitrides, e.g. GaN
H10F 77/1248
Comprising only Group III-V materials, e.g. GaAs: having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP