Thin film transistor substrate
AssigneeSamsung Display Co., Ltd.
InventorsBong-Kyun Kim, Seung-Ho Yoon, Shin-Il Choi
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Abstract
A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.
Claims4
A thin film transistor substrate, comprising:
- a gate electrode disposed on a substrate;
- a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor;
- a source electrode and a drain electrode disposed on the semiconductor layer, wherein the drain electrode is spaced apart from the source electrode;
- and
- a capping layer disposed on the main wiring layer and that includes a transparent conductive oxide,
- wherein the source electrode and the drain electrode each include a barrier layer and a main wiring layer disposed on the barrier layer, the main wiring layer includes one of copper or a copper alloy, and
- wherein the capping layer includes one of indium-zinc oxide (IZO), gallium-zinc oxide (GZO), or aluminium-zinc oxide (AZO), and a content of a zinc oxide (ZnO) in the transparent conductive oxide is 70 wt % or more.
Dependencies are inferred from the claim text.