Back to results
US 9,871,138 B2Granted
Semiconductor device and method of fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Yu-Cheng Tung
Life of this patent
Estimating the term…
Abstract
The present invention provides a semiconductor device, including a substrate, two gate structures disposed on a channel region of the substrate, an epitaxial layer disposed in the substrate between two gate structures, a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines.
Claims11
A semiconductor device, comprising:
- a substrate;
- two gate structures disposed on a channel region of the substrate;
- an epitaxial layer disposed in the substrate between two gate structures;
- and
- a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines, in addition, the first dislocation intersects the second dislocation, wherein the profile of the first dislocation includes at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a reverse V profile, the profile of the second dislocation includes at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a V profile.
2 more elements
A semiconductor device, comprising:
- a substrate;
- two gate structures disposed on a channel region of the substrate, and two spacers disposed on two sides of each gate structure;
- an epitaxial layer disposed in the substrate between two gate structures;
- a first dislocation disposed in the epitaxial layer;
- and
- a second dislocation disposed adjacent to a top surface of the epitaxial layer, the second dislocation contacting the spacer directly, the profile of the second dislocation having at least two first lines and at least two second lines, and the first line not being parallel to the second line, in addition, the first dislocation intersects the second dislocation, wherein the profile of the first dislocation includes at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a reverse V profile, the profile of the second dislocation includes at least two non-parallel slanting lines, and the two non-parallel slanting lines compose a V profile.
3 more elements
Dependencies are inferred from the claim text.