Power MOSFETs and methods for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYogendra Yadav, Chi-Chih Chen, Ruey-Hsin Liu, Chih-Wen Yao
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Abstract
A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
Claims20
A semiconductor device, comprising:
- a substrate;
- a source region of a first conductivity type located at a first side within the substrate;
- a drain region of the first conductive type located at a second side within the substrate opposite to the first side;
- a field plate over the substrate and between the source region and the drain region;
- a gate electrode having a first portion and a second portion, wherein the first portion of the gate electrode is located over the field plate;
- a first dielectric having a top surface and a bottom surface, the top surface being in contact with the gate electrode and the bottom surface being in contact with the substrate;
- a second dielectric located between the field plate and the substrate;
- a third dielectric located between the first portion of the gate electrode and the field plate;
- and
- a first spacer located on the substrate and in contact with the second dielectric.
A semiconductor device, comprising:
- a substrate;
- a drift region with a first conductivity type, extending from a top surface of the substrate into the substrate and located in proximity to a first side of the substrate;
- a second region with a second conductivity type, extending from the top surface of the substrate into the substrate and located in proximity to a second side of the substrate opposite to the first side;
- a source region of a first conductivity type within the second region;
- a drain region of the first conductive type within the drift region;
- a field plate over the drift region;
- a gate electrode over the drift region, wherein a top surface of the gate electrode is substantially fully covered by a silicide layer;
- a first spacer on the substrate and adjacent to the field plate, a side of the first spacer aligning with a boundary of the drain region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate;
- forming a source region of a first conductivity type at a first side within the substrate;
- forming a drain region of the first conductive type located at a second side within the substrate opposite to the first side;
- forming a field plate oxide over the substrate;
- forming a field plate over the field plate oxide and between the source region and the drain region;
- forming a gate electrode over the substrate after forming the field plate, a first portion of the gate electrode being over the field plate;
- forming an inter poly oxide between the first portion of the gate electrode and the field plate;
- and
- forming a first spacer on the substrate and in contact with the field plate oxide.
Dependencies are inferred from the claim text.