Discrete semiconductor transistor

A discrete semiconductor transistor, comprising:

• transistor cells in a single semiconductor body, each of the transistor cells comprising a gate electrode terminal, a first load terminal and a second load terminal, wherein the gate electrode terminals of the transistor cells are electrically connected, the first load terminals of the transistor cells are electrically connected and the second load terminals of the transistor cells are electrically connected;
• a gate resistor electrically coupled between a gate terminal and the gate electrode terminals of the transistor cells;
• wherein
• a resistance R of the gate resistor at a temperature of 25° C. is greater than at the temperature of 150° C., and
• wherein the gate resistor is a is a parallel connection of a plurality of gate sub-resistors, each gate sub-resistor being electrically coupled to a different group of the transistor cells of the discrete semiconductor transistor.