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US 9,871,121 B2Granted
Semiconductor device having a gap defined therein
AssigneeQUALCOMM Incorporated
InventorsJeffrey Junhao Xu, Kern Rim, John Jianhong Zhu, Stanley Seungchul Song, Mustafa Badaroglu, Vladimir Machkaoutsan, Da Yang, Choh Fei Yeap
Life of this patent
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Abstract
In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.
Claims16
A semiconductor device comprising:
- a gate;
- a contact;
- a spacer positioned between the gate and the contact;
- and
- a source/drain region electrically coupled to the contact, wherein multiple surfaces of the spacer and a surface of the source/drain region defines a gap positioned between the gate and the contact, wherein the gap comprises an air gap or a vacuum gap,
- wherein the spacer contacts the source/drain region, the gate and the source/drain region contact a substrate, and a height of the gap is less than a height of the gate.
3 more elements
An apparatus comprising:
- means for activating a channel region of a semiconductor device, wherein the channel region is coupled to a source/drain region of the semiconductor device;
- means for conducting current, the means for conducting coupled to the source/drain region;
- and
- means for spacing, the means for spacing positioned between the means for activating and the means for conducting, wherein multiple surfaces of the means for spacing and a surface of the source/drain region defines a gap positioned between the means for activating and the means for conducting, wherein the gap comprises an air gap or a vacuum gap, wherein the means for spacing contacts the source/drain region, the means for activating the channel region and the source/drain region contact a substrate, and a height of the gap is less than a height of the means for activating the channel region.
1 more element
Dependencies are inferred from the claim text.