Semiconductor structure with an L-shaped bottom plate

A semiconductor structure, the semiconductor structure comprising:

• an electrical contact that is connected to two different source/drain semiconductor structures of two different transistor structures that each have vertical channels;
• a first vertical channel included in one of the two different transistor structures;
• and a first source/drain semiconductor structure connected to the first vertical channel, wherein an end of the first vertical channel abuts a horizontal surface of the first source/drain semiconductor structure such that the first source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel, the first source/drain semiconductor structure extending horizontally from the vertical side farther than the first vertical channel extends from the vertical side such that a length of the horizontal surface equals a width of the source/drain semiconductor structure as measured from the vertical side of the source/drain semiconductor structure to an opposite vertical side of the first source/drain semiconductor structure, wherein the width of the source/drain semiconductor structure is greater than a width of the first vertical channel, wherein the first source/drain semiconductor structure is located on a layer of substrate, and wherein the horizontal surface is parallel to the layer of substrate at a distance, the vertical channel being perpendicular relative to the layer of substrate, wherein a bottom surface of the source/drain semiconductor structure is in direct contact with a semiconductor-on-insulator (SOI) layer.