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US 9,871,112 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeNational Taiwan Normal University
InventorsChun-Hu Cheng, Chun-Yen Chang, Yu-Chien Chiu
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Abstract
A semiconductor device includes a substrate, a channel layer, a barrier layer, a source and a drain, a p-type nitride layer and a strain gate. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source and the drain are respectively disposed at two sides of the barrier layer. The p-type nitride layer is disposed on the barrier layer. The strain gate is disposed over the p-type nitride layer for tuning a first strain of the channel layer and a second strain of the barrier layer.
Claims6
A semiconductor device comprising:
- a substrate;
- a channel layer disposed on the substrate;
- a barrier layer disposed on the channel layer;
- a source and a drain respectively disposed at two sides of the barrier layer;
- a p-type nitride layer disposed on the barrier layer;
- a strain gate disposed over the p-type nitride layer, wherein the strain gate is configured to tune a first strain of the channel layer and a second strain of the barrier layer;
- and
- a ferroelectric material layer disposed between the p-type nitride layer and the strain gate.
5 more elements
Dependencies are inferred from the claim text.