Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorNoriaki Yao
Life of this patent
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Abstract
It is aimed to reduce a current concentration at the edge of the contact electrode. Provided is a semiconductor device including a semiconductor layer, a first trench electrode formed in the semiconductor layer on a front surface side thereof, and a second trench electrode formed in the semiconductor layer on the front surface side thereof so as to oppose the first trench electrode. Here, the first trench electrode is formed in a mesh-like pattern. The semiconductor layer may further include a first-conductivity-type region and a second-conductivity-type region having a different conductivity type than the first-conductivity-type region. The first trench electrode may be electrically connected to the first-conductivity-type region, and the second trench electrode may be electrically connected to the second-conductivity-type region.
Claims10
A semiconductor device comprising:
- a semiconductor layer including a first-conductivity-type region and a second-conductivity-type region having a different conductivity type than the first-conductivity-type region;
- a first trench electrode formed in the semiconductor layer on a front surface side thereof and electrically connected to the first-conductivity-type region;
- and
- a second trench electrode formed in the semiconductor layer on the front surface side thereof and electrically connected to the second-conductivity-type region, the second trench electrode opposing the first trench electrode, wherein
- the first trench electrode is formed in a mesh-like pattern,
- the first-conductivity-type region and the second-conductivity-type region form a p-n junction,
- the first trench electrode includes two or more first parallel portions that extend in parallel to a boundary surface of the p-n junction and that are spaced away from each other, and
- a pitch of the first parallel portions decreases as a distance of the first parallel portions from the boundary surface of the p-n junction decreases.
A semiconductor device comprising:
- a semiconductor layer including a first-conductivity-type region and a second-conductivity-type region having a different conductivity type than the first-conductivity-type region;
- a first trench electrode formed in the semiconductor layer on a front surface side thereof and electrically connected to the first-conductivity-type region;
- and
- a second trench electrode formed in the semiconductor layer on the front surface side thereof and electrically connected to the second-conductivity-type region, the second trench electrode opposing the first trench electrode, wherein
- the first trench electrode is formed in a mesh-like pattern,
- the first-conductivity-type region and the second-conductivity-type region form a p-n junction,
- the first trench electrode includes two or more first parallel portions that extend in parallel to a boundary surface of the p-n junction and that are spaced away from each other, and
- a width of each first parallel portion in a direction perpendicular to the boundary surface of the p-n junction is smaller than a saturation length of a propagation length of the first trench electrode.
Dependencies are inferred from the claim text.