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US 9,871,108 B2Granted
Nitride semiconductor device
AssigneeRohm Co., Ltd.
InventorsTaketoshi Tanaka, Norikazu Ito
Life of this patent
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Abstract
A nitride semiconductor device according to the present invention includes a nitride semiconductor layer having a gate, a source and a drain and a field plate on the nitride semiconductor layer electrically connected to the gate or the source, where when it is assumed that a drain voltage value where the value of COSS is reduced to one half of a value when a drain voltage is 0 V is V1, the dielectric breakdown voltage of the device is V2, a gate length is Lg, a field plate length is Lfp, a shallow acceptor concentration is NA, a deep acceptor concentration is NDA, a vacuum permittivity is ∈0 and the relative permittivity of the nitride semiconductor layer is ∈, formulas (1) and (2) below are satisfied. V1<q(NA+NDA)·Lg2/2∈0∈ (1) V2<q(NA+NDA)·(Lg+Lfp)2/2∈0∈ (2)
Claims19
A nitride semiconductor device comprising:
- a nitride semiconductor layer having a gate, a source and a drain;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein formulas (1) and (2), below, are satisfied when a drain voltage value is V1(V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a dielectric breakdown voltage of the device is V2(V), a gate length is Lg(cm), a field plate length is Lfp(cm), a shallow acceptor concentration is NA(/cm3), a deep acceptor concentration is NDA(/cm3), a vacuum permittivity is ∈0, and a relative permittivity of the nitride semiconductor layer is ∈, and
- wherein when a voltage V3(V), that is larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other
- V1<q(NA+NDA)·Lg2/2∈0∈ (1)
- V2<q(NA+NDA)·(Lg+Lfp)2/2∈0∈ (2).
4 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer having a gate, a source and a drain;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein formulas (5) and (6), below, are satisfied when a drain voltage value V1(V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a dielectric breakdown voltage of the device is V2(V), a gate length is Lg(cm), a field plate length is Lfp(cm), a shallow donor concentration is ND(/cm3), a deep donor concentration is NDD(/cm3), a shallow acceptor concentration is NA(/cm3), a deep acceptor concentration is NDA(/cm3), a vacuum permittivity is ∈0, and a relative permittivity of the nitride semiconductor layer is ∈, and
- wherein when a voltage V3(V) that is larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other
- V1<q(NA+NDA−ND−NDD)·Lg2/2∈0∈ (5)
- V2<q(NA+NDA−ND−NDD)·(Lg+Lfp)2/2∈0∈ (6).
4 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer having a gate, a source and a drain;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein formulas (1) and (2) below are satisfied when a drain voltage value is V1(V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a maximum rated voltage of the device is V2(V), a gate length is Lg(cm), a field plate length is Lfp(cm), a shallow acceptor concentration is NA(/cm3), a deep acceptor concentration is NDA(/cm3), a vacuum permittivity is ∈0, and a relative permittivity of the nitride semiconductor layer is ∈, and
- wherein when a voltage V3(V) that us larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other
- V1<q(NA+NDA)·Lg2/2∈0∈ (1)
- V2<q(NA+NDA)·(Lg+Lfp)2/2∈0∈ (2).
4 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer having a gate, a source and a drain;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein formulas (5) and (6), below, are satisfied when a drain voltage value is V1 (V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a maximum rated voltage of the device is V2(V), a gate length is Lg(cm), a field plate length is Lfp(cm), a shallow donor concentration is ND(/cm3), a deep donor concentration is NDD(/cm3), a shallow acceptor concentration is NA(/cm3), a deep acceptor concentration is NDA(/cm3), a vacuum permittivity is ∈0, and a relative permittivity of the nitride semiconductor layer is ∈, and
- wherein when a voltage V3(V) that is larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other
- V1<q(NA+NDA−ND−NDD)·Lg2/2∈0∈ (5)
- V2<q(NA+NDA−ND−NDD)·(Lg+Lfp)2/2∈0∈ (6).
4 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer having a gate, a source and a drain;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein formulas (5) and (9), below, are satisfied when a drain voltage value is V1(V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a sheet carrier density of a two-dimensional electron gas is NS(/cm2), a gate length is Lg(cm), a field plate length is Lfp(cm), a shallow donor concentration is ND(/cm3), a deep donor concentration is NDD(/cm3), a shallow acceptor concentration is NA(/cm3), a deep acceptor concentration is NDA(/cm3), a vacuum permittivity is ∈0, and a relative permittivity of the nitride semiconductor layer is ∈, and
- wherein when a voltage V3(V), that is larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other
- V1<q(NA+NDA−ND−NDD)·Lg2/2∈0∈ (5)
- NS2/(NA+NDA−ND−NDD)<(NA+NDA−ND−NDD)·(Lg+Lfp)2 (9)
4 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer having a gate, a source and a drain;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein formulas (1) and (11), below, are satisfied when it is assumed that a drain voltage value is V1 (V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a sheet carrier density of a two-dimensional electron gas is NS(/cm2), a gate length is Lg(cm), a field plate length is Lfp(cm), a shallow acceptor concentration is NA(/cm3), a deep acceptor concentration is NDA(/cm3), a vacuum permittivity is ∈0 and a relative permittivity of the nitride semiconductor layer is ∈, and
- wherein when a voltage V3(V) that larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other
- V1<q(NA+NDA)·Lg2/2∈0∈ (1)
- NS2/(NA+NDA)<(NANDA)·(Lg+Lfp)2 (11).
4 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer which includes an electron transit layer and an electron supply layer that is in contact with the electron transit layer and that has a composition different from the electron transit layer;
- a gate, a source and a drain on the nitride semiconductor layer;
- and
- a field plate on the nitride semiconductor layer electrically connected to the gate or the source,
- wherein at least a part of the electron transit layer contains carbon, and a concentration of the carbon is 1×1018 cm−3 to 1×1019 cm−3, and
- wherein when a drain voltage value is V1(V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a dielectric breakdown voltage of the device is V2(V), and a voltage V3(V), that is larger than V1(V) and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other.
3 more elements
A nitride semiconductor device comprising:
- a nitride semiconductor layer which includes an electron transit layer and an electron supply layer that is in contact with the electron transit layer and that has a composition different from the electron transit layer;
- a gate, a source and a drain on the nitride semiconductor layer;
- and
- a field plate which is electrically connected to the gate or the source and which is arranged on the nitride semiconductor layer via an insulating film,
- wherein a gate length Lg is equal to or less than 0.6 μm, at least a part of the electron transit layer contains carbon, a concentration of the carbon is equal to or more than 1×1018 cm−3 and when it is assumed that a thickness of the insulating film under the field plate is d, and a relative permittivity of the insulating film is ∈, d/∈≦14 is satisfied, and
- wherein when a drain voltage value is V1(V) and a value of COSS is reduced to one half of a value when a drain voltage is 0 V, a dielectric breakdown voltage of the device is V2(V), and a voltage V3(V), that is larger than and smaller than V2(V), is applied to the drain, a voltage drop is produced under the field plate and two regions where a trap is fully filled with electrons are produced at both sides sandwiching a region under the gate such that the two regions are separated from each other.
3 more elements
Dependencies are inferred from the claim text.