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US 9,871,105 B2Granted
Method of forming an isolation structure in a well of a substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Chih Chou, Kong-Beng Thei
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Abstract
A method includes forming an isolation structure in a well of a substrate. A portion of the isolation structure protrudes from a top surface of the well. The isolation structure is partially removed, thereby forming a modified isolation structure. An upper surface of the modified isolation structure is lower than the upper surface of the substrate.
Claims20
A method, comprising:
- forming an isolation structure in a well of a substrate, an upper portion of the isolation structure protruding from a top surface of the well;
- and
- partially removing the isolation structure to form a modified isolation structure, wherein an upper surface of the modified isolation structure is lower than an upper surface of the substrate.
A method, comprising:
- forming an isolation structure in a well of a substrate, an upper portion of the isolation structure protruding from a top surface of the substrate;
- and
- partially removing the isolation structure to form a modified isolation structure, wherein an upper surface of the modified isolation structure is lower than a top surface of the well.
A method, comprising:
- forming an isolation structure in a well of a substrate, an upper portion of the isolation structure protruding from a top surface of the well;
- modifying the isolation structure in the well to form a modified isolation structure;
- forming a gate dielectric structure partially on an upper surface of the modified isolation structure in the well;
- and
- forming a gate electrode structure over the gate dielectric structure, an upper surface of the gate electrode structure having a first portion directly over the modified isolation structure, the first portion of the upper surface of the gate electrode structure being lower than a second portion of the upper surface of the gate electrode structure.
2 more elements
Dependencies are inferred from the claim text.