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US 9,871,102 B2Granted
Method of forming a single-crystal nanowire finFET
AssigneeUnited Microelectronics Corp.
InventorsHsin-Yu Chen, Huai-Tzu Chiang, Sheng-Hao Lin, Hao-Ming Lee
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Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.
Claims11
A method of forming a semiconductor device, comprising:
- forming two dielectric layers and two first material layers stacked alternately on a substrate;
- etching the first material layers and the dielectric layers to expose a portion of the substrate;
- forming a second material layer on the portion of the substrate;
- transforming the first material layers into two single-crystal material layers;
- and
- completely removing the dielectric layer between the two single-crystal material layers and partially removing the dielectric layer between the single-crystal material layers and the substrate to leave a portion of the dielectric remained on the substrate and not in contact with the two single-crystal material layers, and to form a nanowire structure.
3 more elements
Dependencies are inferred from the claim text.