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US 9,871,101 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGerben Doornbos, Chun-Hsiung Lin, Chien-Hsun Wang, Carlos H. Diaz
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Abstract
A semiconductor structure, and methods for forming the semiconductor device are provided. In various embodiments, the semiconductor device includes a substrate, source/drain regions over the substrate, a plurality of nanowires over the substrate and sandwiched by the source/drain regions, a gate dielectric layer surrounding the plurality of nanowires, and a gate layer surrounding the gate dielectric layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- source/drain regions over the substrate;
- a plurality of nanowires over the substrate and sandwiched by the source/drain regions;
- a gate dielectric layer surrounding the plurality of nanowires, wherein the gate dielectric layer is merged among neighboring nanowires and has a collective curved sidewall surrounding the plurality of nanowires;
- and
- a gate layer conformingly disposed on the gate dielectric layer.
3 more elements
Dependencies are inferred from the claim text.