Trench structure of semiconductor device having uneven nitrogen distribution liner
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJia-Ming Lin, Shiu-Ko Jangjian, Chun-Che Lin, Ying-Lang Wang, Wei-Ken Lin, Chuan-Pu Liu
Life of this patent
Estimating the term…
Abstract
A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.
Claims20
A trench structure of a semiconductor device, comprising:
- a substrate having a trench therein, wherein the trench has a bottom surface, a top portion, a middle portion, and a bottom portion, the middle portion is disposed between the top portion and the bottom portion, and the bottom portion is closer to the bottom surface than the top portion;
- an isolation structure disposed in the trench;
- and
- a liner layer disposed between the substrate and the isolation structure, wherein the liner layer comprises nitrogen, and a nitrogen concentration of the liner layer at the middle portion is lower than a nitrogen concentration of the liner layer at the bottom portion.
A trench structure of a semiconductor device, comprising:
- a substrate having a first trench and a second trench therein;
- a first isolation structure and a second isolation structure respectively disposed in the first trench and the second trench;
- a first liner layer at least disposed between the substrate and the first isolation structure;
- a second liner layer at least disposed between the substrate and the second isolation structure, wherein the first liner layer is connected to the second liner layer;
- and
- a semiconductor fin disposed between the first trench and the second trench, wherein the semiconductor fin has a sidewall, the sidewall of the semiconductor fin has a top portion, a middle portion, and a bottom portion, the middle portion is disposed between the top portion and the bottom portion, the first liner layer is in contact with the sidewall of the semiconductor fin, and a nitrogen concentration of the first liner layer in contact with the middle portion is lower than a nitrogen concentration of the first liner layer in contact with the bottom portion, and the nitrogen concentration of the first liner layer in contact with the middle portion is lower than a nitrogen concentration of the first liner layer on a bottom surface of the first trench.
A trench structure of a semiconductor device, comprising:
- a substrate having a first trench and a second trench to define a semiconductor fin therebetween;
- a liner layer conformally disposed on the semiconductor fin, the first trench, and the second trench, wherein the semiconductor fin has a sidewall, the sidewall of the semiconductor fin has a top portion, a middle portion, and a bottom portion, the middle portion is disposed between the top portion and the bottom portion, the liner layer is in contact with the sidewall of the semiconductor fin and a bottom surface of the first trench, and a nitrogen concentration of the liner layer in contact with the middle portion is lower than a nitrogen concentration of the liner layer in contact with the bottom surface of the first trench;
- a first isolation structure disposed in the first trench and on the liner layer;
- and
- a second isolation structure disposed in the second trench and on the liner layer.
Dependencies are inferred from the claim text.