Semiconductor devices
AssigneeSamsung Electonics Co., Ltd.
InventorsKyung-Eun Kim, Ki-hyung Nam, Byung Yoon Kim, Bong-Soo Kim, Eunjung Kim, Yoosang Hwang
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Abstract
Provided is a semiconductor device. The semiconductor device includes a capacitor structure including a plurality of lower electrodes, a dielectric layer that covers surfaces of the plurality of lower electrodes, and an upper electrode on the dielectric layer. The semiconductor device further includes a support structure that supports the plurality of lower electrodes. The support structure includes a first support region that covers sidewalls of one of the plurality of lower electrodes, and an opening that envelops the first support region when the semiconductor device is viewed in plan view.
Claims20
A semiconductor device comprising:
- a capacitor structure comprising a plurality of lower electrodes, a dielectric layer that covers surfaces of the plurality of lower electrodes, and a plurality of upper electrodes on the plurality of dielectric layers, respectively;
- and
- a support structure that supports the plurality of lower electrodes,
- wherein the support structure comprises:
- a first support region that covers sidewalls of a first one of the plurality of lower electrodes;
- and
- an opening that envelops the first support region when the semiconductor device is viewed in plan view.
A semiconductor device comprising:
- a capacitor structure comprising a plurality of lower electrodes, a dielectric layer that covers surfaces of the plurality of lower electrodes, and an upper electrode on the dielectric layer;
- and
- a support structure that supports the plurality of lower electrodes,
- wherein the support structure comprises:
- a first support region that covers sidewalls of a first one of the plurality of lower electrodes;
- a second support region that covers sidewalls of a second one of the plurality of lower electrodes;
- and
- an opening between the first support region and the second support region,
- wherein the opening separates the first support region and the second support region from each other.
A semiconductor device comprising:
- a capacitor structure comprising a plurality of lower electrodes, a dielectric layer that covers surfaces of the plurality of lower electrodes, and an upper electrode on the dielectric layer;
- a first support region that contacts a sidewall of a first one of the plurality of lower electrodes and having a polygonal shape when the semiconductor device is viewed in plan view;
- and
- a second support region that contacts a sidewall of a second one of the plurality of lower electrodes and surrounding the first support region when the semiconductor device is viewed in plan view.
Dependencies are inferred from the claim text.