Light-emitting device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKaoru Hatano
Life of this patent
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Abstract
When a hollow structure in which a light-emitting element is provided between a pair of substrates is used in order to prevent oxygen or moisture from reaching the light-emitting element, light leakage to an adjacent pixel easily occurs as compared to a structure in which a space between a pair of substrates is filled with a resin such as an adhesive. In order to reduce light leakage to an adjacent pixel in the hollow structure, a light-blocking spacer is formed over a partition to keep the distance between the pair of substrates uniform. The cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side.
Claims25
A semiconductor device comprising:
- a first substrate;
- a transistor over the first substrate;
- an insulating film over the transistor;
- a first electrode on the insulating film, the first electrode electrically connected to the transistor;
- a partition on the insulating film, the partition covering a periphery of the first electrode;
- a light-blocking spacer on the partition;
- a second electrode covering the light-blocking spacer;
- a second substrate being fixed to the first substrate;
- and
- first and second black matrixes with a coloring layer positioned therebetween which are in contact with the second substrate,
- wherein a cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side,
- wherein the first black matrix covers the light-blocking spacer and is in contact with the second electrode,
- wherein the second black matrix overlaps with the transistor and is not in contact with the second electrode, and
- wherein the coloring layer overlaps with the first electrode.
A semiconductor device comprising:
- a first substrate;
- a transistor over the first substrate;
- an insulating film over the transistor;
- a first electrode on the insulating film, the first electrode electrically connected to the transistor;
- a partition on the insulating film, the partition covering a periphery of the first electrode;
- a light-blocking spacer over the partition;
- a second electrode covering the light-blocking spacer;
- a second substrate fixed to the first substrate;
- and
- a first black matrix and a second black matrix adjacent to the first black matrix, the first black matrix and the second black matrix being in contact with the second substrate,
- wherein a cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side,
- wherein the first black matrix is in contact with the second electrode,
- wherein the second black matrix is not in contact with the second electrode, and
- wherein a first part of the second electrode, which is formed on a side surface of the light-blocking spacer, is thinner than a second part of the second electrode in a region overlapping with the first electrode.
A semiconductor device comprising:
- a first substrate;
- an insulating film over the first substrate;
- a first electrode on the insulating film;
- a partition over the insulating film, the partition covering a periphery of the first electrode;
- a spacer having light-blocking property over the partition;
- a second electrode covering the spacer;
- a second substrate fixed to the first substrate;
- and
- a first black matrix, a second black matrix, and a coloring layer provided between the first black matrix and the second black matrix on the second substrate,
- wherein a cross-sectional shape of the spacer is a trapezoid having a lower side shorter than an upper side,
- wherein a first part of the second electrode, which is formed on a side surface of the spacer, is thinner than a second part of the second electrode in a region overlapping with the first electrode,
- wherein the first black matrix overlaps with the spacer and is in contact with the second electrode,
- wherein the second black matrix is not in contact with the second electrode, and
- wherein the coloring layer overlaps with the first electrode.
Dependencies are inferred from the claim text.