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US 9,871,075 B2Granted
Optoelectronic semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorsStefan Grötsch, Matthias Kiessling, Michael Wittmann, Stefan Gruber
Life of this patent
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Abstract
An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.
Claims18
An optoelectronic semiconductor component comprising:
- a plurality of first functional regions, each first functional region comprising an active zone provided for generating or receiving radiation;
- and
- a second functional region comprising a serial shift register and a driver or parts of a driver for the first functional regions, the second functional region being configured to generate a plurality of signals for driving the first functional regions,
- wherein the first functional regions and the second functional region are integrated on the same carrier substrate, wherein the second functional region is configured to generate a pulse width modulation signal, and
- wherein the second functional region extends at least partly between the active zones of two of the plurality of first functional regions, or
- wherein the active zone of the first functional region extends in an epitaxial layer below which the second functional region at least partly extends.
3 more elements
An optoelectronic semiconductor component comprising:
- a carrier substrate;
- a first functional region integrated on the carrier substrate, the first functional region comprising a plurality of LEDs;
- and
- a second functional region integrated on the carrier substrate, wherein the second functional region comprises a serial shift register having a data input and being suitable for contributing to driving of the first functional region, wherein the second functional region is configured to generate a pulse width modulation signal, and
- wherein the shift register extends at least partly between active zones of two of the plurality of LEDs, or
- wherein an active zone of the LEDs extends in an epitaxial layer, the shift register extending at least partially below the epitaxial layer.
3 more elements
An optoelectronic semiconductor component comprising:
- a plurality of LEDs disposed in a substrate, the LEDs being coupled in series;
- a plurality of transistors disposed in the substrate, each transistor having a control input and a current path coupled in parallel with an associated one of the LEDs;
- and
- a shift register disposed in the substrate, the shift register having a plurality of outputs, each output being coupled to the control input of an associated transistor,
- wherein the shift register extends at least partly between active zones of two of the plurality of LEDs, or
- wherein an active zone of the LEDs extends in an epitaxial layer, the shift register extending at least partially below the epitaxial layer.
3 more elements
An optoelectronic semiconductor component comprising:
- a plurality of first functional regions, each first functional region comprising an active zone provided for generating or receiving radiation;
- and
- a second functional region comprising a serial shift register and a driver or parts of a driver for the first functional regions, the second functional region being configured to generate a plurality of signals for driving the first functional regions, wherein the first functional regions and the second functional region are integrated on the same carrier substrate, and
- wherein the second functional region extends at least partly between the active zones of two of the plurality of first functional regions, or
- wherein the active zone of the first functional region extends in an epitaxial layer below which the second functional region at least partly extends.
2 more elements
An optoelectronic semiconductor component comprising:
- a carrier substrate;
- a first functional region integrated on the carrier substrate, the first functional region comprising an active zone provided for generating radiation or for receiving radiation;
- and
- a second functional region integrated on the carrier substrate, wherein the second functional region comprises a serial shift register having a data input and being suitable for contributing to driving of the first functional region, and
- wherein the second functional region extends at least partly between the active zones of two of a plurality of first functional regions, or
- wherein the active zone of the first functional region extends in an epitaxial layer below which the second functional region at least partly extends.
3 more elements
An optoelectronic semiconductor component comprising:
- a plurality of LEDs disposed in a substrate, the LEDs being coupled in series;
- a plurality of transistors disposed in the substrate, each transistor having a control input and a current path coupled in parallel with an associated one of the LEDs;
- and
- a shift register disposed in the substrate, the shift register having a plurality of outputs, each output being coupled to the control input of an associated transistor,
- wherein the shift register extends at least partly between active zones of two of the plurality of LEDs, or
- wherein an active zone of the LEDs extends in an epitaxial layer, the shift register extending at least partially below the epitaxial layer.
3 more elements
Dependencies are inferred from the claim text.