Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors

An image sensor comprising:

• a photodetector arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate;
• an interconnect structure arranged under the semiconductor substrate;
• a pad structure arranged in the peripheral opening, and protruding through a lower surface of the peripheral opening to the interconnect structure;
• and
• a conductive layer electrically coupled to the pad structure, and extending laterally towards the photodetector from over the pad structure, wherein the conductive layer comprises a backside shield structure laterally surrounding a color filter opening overlapping with the photodetector.

An image sensor comprising:

• an array of photodetectors arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate;
• a pad structure arranged in the peripheral opening, and protruding through a lower surface of the peripheral opening to an underlying interconnect structure;
• a conductive layer electrically coupled to the pad structure, and extending laterally towards the array of photodetectors from over the pad structure, wherein the conductive layer is arranged laterally between color filter openings according to a first grid pattern, and wherein the color filter openings overlap respective ones of the photodetectors;
• and
• a backside deep trench isolation (BDTI) structure extending into the semiconductor substrate, and arranged laterally between the photodetectors according to a second grid pattern.